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1 |
Material Type: Artigo
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System dynamics monitoring using PIC micro-controller-based PLSEDjeufa Dagoumguei, Guy Morgand ; Tagne, Samuel ; Eyebe Fouda, J. S. Armand ; Koepf, WolframChaos (Woodbury, N.Y.), 2023-07, Vol.33 (7) [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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Material Type: Ata de Congresso
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Numerical modeling of low frequency noise in ultrathin oxide MOSFETsMartinez, F ; Armand, J ; Valenza, MNoise and Fluctuations (AIP Conference Proceedings Volume 1129), 2009, Vol.1129, p.285-290 [Periódico revisado por pares]Sem texto completo |
3 |
Material Type: Ata de Congresso
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Low Frequency Noise of Ultrathin Oxide MOSFETs using Green's Function ApproachArmand, J ; Martinez, F ; Valenza, MNoise and Fluctuations (AIP Conference Proceedings Volume 922), 2007, Vol.922, p.63-66 [Periódico revisado por pares]AIPSem texto completo |
4 |
Material Type: Artigo
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Monitored Beam X Ray Absorption SpectrometerPanson, Armand J. ; Kuriyama, MasaoRev. Sci. Instr, 1965-10, Vol.36 (10), p.1488-1489 [Periódico revisado por pares]Texto completo disponível |
5 |
Material Type: Artigo
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dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technologyArmand, J. ; Martinez, Frédéric ; Benoit, P. ; Valenza, M. ; Vincent, E. ; Huard, V. ; Rochereau, K.Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009-05, Vol.27 (3)American Vacuum Society (AVS)Texto completo disponível |
6 |
Material Type: Artigo
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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 KReboud, V. ; Gassenq, A. ; Pauc, N. ; Aubin, J. ; Milord, L. ; Thai, Q. M. ; Bertrand, M. ; Guilloy, K. ; Rouchon, D. ; Rothman, J. ; Zabel, T. ; Armand Pilon, F. ; Sigg, H. ; Chelnokov, A. ; Hartmann, J. M. ; Calvo, V.Applied physics letters, 2017-08, Vol.111 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Mid-infrared supercontinuum generation in a low-loss germanium-on-silicon waveguideDella Torre, Alberto ; Sinobad, Milan ; Armand, Remi ; Luther-Davies, Barry ; Ma, Pan ; Madden, Stephen ; Mitchell, Arnan ; Moss, David J. ; Hartmann, Jean-Michel ; Reboud, Vincent ; Fedeli, Jean-Marc ; Monat, Christelle ; Grillet, ChristianAPL photonics, 2021-01, Vol.6 (1), p.016102-016102-7 [Periódico revisado por pares]AIP Publishing LLCTexto completo disponível |
8 |
Material Type: Ata de Congresso
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HJT shingle modules reliability and temperature coefficientsCarrière, Carolyn ; Couderc, Romain ; Harrison, Samuel ; Bettinelli, Armand ; Barth, Vincent ; Voroshazi, Eszter ; Sovernigo, Enrico ; Galiazzo, Marco Verlinden, Pierre ; Ballif, Christophe ; Weeber, Arthur ; Glunz, Stefan ; Hahn, Giso ; Dubois, Sébastien ; Peibst, Robby ; Poortmans, JefAIP Conference Proceedings, 2023, Vol.2826 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
9 |
Material Type: Artigo
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In situ Raman imaging of interdiffusion in a microchannelSalmon, Jean-Baptiste ; Ajdari, Armand ; Tabeling, Patrick ; Servant, Laurent ; Talaga, David ; Joanicot, MathieuApplied physics letters, 2005-02, Vol.86 (9), p.094106-094106-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Evidence of Germanium precipitation in phase-change Ge1−xTex thin films by Raman scatteringGourvest, E. ; Lhostis, S. ; Kreisel, J. ; Armand, M. ; Maitrejean, S. ; Roule, A. ; Vallée, C.Applied physics letters, 2009-07, Vol.95 (3), p.31908 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |