Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substratesEndo, Y. ; Sato, T. ; Takita, A. ; Kawamura, Y. ; Yamamoto, M.IEEE transactions on magnetics, 2005-10, Vol.41 (10), p.2718-2720New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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High In-Plane Thermal Conductivity of Aluminum Nitride Thin FilmsHoque, Md Shafkat Bin ; Koh, Yee Rui ; Braun, Jeffrey L ; Mamun, Abdullah ; Liu, Zeyu ; Huynh, Kenny ; Liao, Michael E ; Hussain, Kamal ; Cheng, Zhe ; Hoglund, Eric R ; Olson, David H ; Tomko, John A ; Aryana, Kiumars ; Galib, Roisul ; Gaskins, John T ; Elahi, Mirza Mohammad Mahbube ; Leseman, Zayd C ; Howe, James M ; Luo, Tengfei ; Graham, Samuel ; Goorsky, Mark S ; Khan, Asif ; Hopkins, Patrick EACS nano, 2021-06, Vol.15 (6), p.9588-9599 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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High-performance solar-blind photodetector of β-Ga2O3 grown on sapphire with embedding an ultra-thin AlN buffer layerWu, Zhe ; Wang, Yuefei ; Song, Youheng ; Fu, Shihao ; Cui, Weizhe ; Gao, Chong ; Xia, Danyang ; Han, Yurui ; Li, Bingsheng ; Shen, Aidong ; Liu, YichunJournal of alloys and compounds, 2024-11, Vol.1005, p.176156, Article 176156 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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X-ray photoelectron spectroscopy studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variationsSharma, Neha ; Ilango, S. ; Dash, S. ; Tyagi, A.K.Thin solid films, 2017-08, Vol.636, p.626-633 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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A rapid and controllable acoustothermal microheater using thin film surface acoustic wavesWang, Yong ; Zhang, Qian ; Tao, Ran ; Chen, Dongyang ; Xie, Jin ; Torun, Hamdi ; Dodd, Linzi E. ; Luo, Jingting ; Fu, Chen ; Vernon, Jethro ; Canyelles-Pericas, Pep ; Binns, Richard ; Fu, YongqingSensors and actuators. A. Physical., 2021-02, Vol.318, p.112508, Article 112508 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor depositionWang, Lu ; Qin, Xulei ; Zhang, Li ; Xu, Kun ; Yang, Feng ; Lu, Shaoqian ; Li, Yifei ; Liu, Bosen ; Yu, Guohao ; Zeng, Zhongming ; Zhang, BaoshunJournal of semiconductors, 2024-09, Vol.45 (9), p.92501 [Periódico revisado por pares]Chinese Institute of ElectronicsTexto completo disponível |
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7 |
Material Type: Artigo
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Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputteringDas, Amal ; Rath, Martando ; Nair, Deleep R. ; Ramachandra Rao, M.S. ; DasGupta, AmitavaApplied surface science, 2021-06, Vol.550, p.149308, Article 149308 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Influences of hydrogen ions doping on the lattice structure of AlN thin films for temperature interpretation applicationDong, Ling ; Jiang, Hongchuan ; Zhao, Xiaohui ; Zhang, WanliVacuum, 2024-03, Vol.221, p.112901, Article 112901 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2Yin, Yue ; Ren, Fang ; Wang, Yunyu ; Liu, Zhiqiang ; Ao, Jinping ; Liang, Meng ; Wei, Tongbo ; Yuan, Guodong ; Ou, Haiyan ; Yan, Jianchang ; Yi, Xiaoyan ; Wang, Junxi ; Li, JinminMaterials, 2018-12, Vol.11 (12), p.2464 [Periódico revisado por pares]MDPITexto completo disponível |
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10 |
Material Type: Artigo
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Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin filmsSharma, Neha ; Rath, Martando ; Ilango, S ; Ravindran, T R ; Ramachandra Rao, M S ; Dash, S ; Tyagi, A KJournal of physics. D, Applied physics, 2017-01, Vol.50 (1), p.15601 [Periódico revisado por pares]IOP PublishingTexto completo disponível |