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Evidence of charged interface states limited scattering in GaN heterostructures
Evidence of charged interface states limited scattering in GaN heterostructures
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Evidence of charged interface states limited scattering in GaN heterostructures

Sanyal, Indraneel ; Chen, Yu-Chih ; Yu, Chuan-Yue ; Chyi, Jen-Inn

Journal of applied physics, 2023-08, Vol.134 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum
Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum
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Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Chu, Chia-Ho ; Sarangadharan, Indu ; Regmi, Abiral ; Chen, Yen-Wen ; Hsu, Chen-Pin ; Chang, Wen-Hsin ; Lee, Geng-Yen ; Chyi, Jen-Inn ; Chen, Chih-Chen ; Shiesh, Shu-Chu ; Lee, Gwo-Bin ; Wang, Yu-Lin

Scientific reports, 2017-07, Vol.7 (1), p.5256-15, Article 5256 [Periódico revisado por pares]

England: Nature Publishing Group

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3
High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity
High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity
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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Chen, Yi-Ting ; Sarangadharan, Indu ; Sukesan, Revathi ; Hseih, Ching-Yen ; Lee, Geng-Yen ; Chyi, Jen-Inn ; Wang, Yu-Lin

Scientific reports, 2018-05, Vol.8 (1), p.8300-11, Article 8300 [Periódico revisado por pares]

England: Nature Publishing Group

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4
The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates
The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates
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The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Zon ; Voranthamrong, Samatcha ; Cheng, Chao-Chia ; Lo, Tzu-Wei ; Li, Zhen-Lun ; Liu, Chun-Nien ; Chiang, Chun-De ; Hung, Li-Wei ; Hsu, Ming-Sen ; Liu, Wei-Sheng ; Chyi, Jen-Inn ; Tu, Charles W.

Journal of applied physics, 2024-01, Vol.135 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer
High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer
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High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

LEE, Geng-Yen ; LIU, Hsueh-Hsing ; CHYI, Jen-Inn

IEEE electron device letters, 2011-11, Vol.32 (11), p.1519-1521 [Periódico revisado por pares]

New York, NY: IEEE

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6
Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum
Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum
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Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

Tai, Tse-Yu ; Sinha, Anirban ; Sarangadharan, Indu ; Pulikkathodi, Anil Kumar ; Wang, Shin-Li ; Lee, Geng-Yen ; Chyi, Jen-Inn ; Shiesh, Shu-Chu ; Lee, Gwo-Bin ; Wang, Yu-Lin

Analytical chemistry (Washington), 2019-05, Vol.91 (9), p.5953-5960 [Periódico revisado por pares]

United States: American Chemical Society

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7
Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor
Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor
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Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor

Pulikkathodi, Anil Kumar ; Sarangadharan, Indu ; Chen, Yi-Hong ; Lee, Geng-Yen ; Chyi, Jen-Inn ; Lee, Gwo-Bin ; Wang, Yu-Lin

Lab on a chip, 2018-01, Vol.18 (7), p.1047-1056 [Periódico revisado por pares]

England: Royal Society of Chemistry

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8
Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure
Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure
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Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure

Liu, Wei-Sheng ; Yang, Ting-Kai ; Hsueh, Wei-Jen ; Chyi, Jen-Inn ; Huang, Tien-Yuan ; Hsu, Ming-En

Applied physics letters, 2019-08, Vol.115 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities
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Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities

Chang, Wen-Hao ; Chen, Wen-Yen ; Chang, Hsiang-Szu ; Hsieh, Tung-Po ; Chyi, Jen-Inn ; Hsu, Tzu-Min

Physical review letters, 2006-03, Vol.96 (11), p.117401-117401, Article 117401 [Periódico revisado por pares]

United States

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10
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
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Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Lee, Hsin-Ying ; Ju, Ying-Hao ; Chyi, Jen-Inn ; Lee, Ching-Ting

Materials, 2021-12, Vol.15 (1), p.42 [Periódico revisado por pares]

Switzerland: MDPI AG

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