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Total reversibility of hysteresis in the transfer characteristics of organic thin-film transistor based on pentacene for nonvolatile memory applications
Total reversibility of hysteresis in the transfer characteristics of organic thin-film transistor based on pentacene for nonvolatile memory applications
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Total reversibility of hysteresis in the transfer characteristics of organic thin-film transistor based on pentacene for nonvolatile memory applications

Boukhili, W. ; Bourguiga, R.

Microelectronic engineering, 2018-07, Vol.194, p.40-44 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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Reversibility of humidity effects in pentacene based organic thin-film transistor: Experimental data and electrical modeling
Reversibility of humidity effects in pentacene based organic thin-film transistor: Experimental data and electrical modeling
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Reversibility of humidity effects in pentacene based organic thin-film transistor: Experimental data and electrical modeling

Boukhili, W. ; Mahdouani, M. ; Erouel, M. ; Puigdollers, J. ; Bourguiga, R.

Synthetic metals, 2015-01, Vol.199, p.303-309 [Periódico revisado por pares]

Elsevier B.V

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3
Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling
Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling
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Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling

Boukhili, W. ; Mahdouani, M. ; Bourguiga, R. ; Puigdollers, J.

Microelectronic engineering, 2016-01, Vol.150, p.47-56 [Periódico revisado por pares]

Elsevier B.V

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4
The effect of Si impurities on the transport properties and the electron-surface phonon interaction in single layer graphene deposited on polar substrates
The effect of Si impurities on the transport properties and the electron-surface phonon interaction in single layer graphene deposited on polar substrates
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The effect of Si impurities on the transport properties and the electron-surface phonon interaction in single layer graphene deposited on polar substrates

Mahdouani, M. ; Gardelis, S. ; Bourguiga, R.

Physica. B, Condensed matter, 2018-12, Vol.550, p.171-178 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Illumination and dipole layer effects on the density of state distribution in n-type organic thin film phototransistors based on naphthalene bis-benzimidazole: Experiment and modeling
Illumination and dipole layer effects on the density of state distribution in n-type organic thin film phototransistors based on naphthalene bis-benzimidazole: Experiment and modeling
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Illumination and dipole layer effects on the density of state distribution in n-type organic thin film phototransistors based on naphthalene bis-benzimidazole: Experiment and modeling

Boukhili, W. ; Tozlu, C. ; Mahdouani, M. ; Erten-Ela, S. ; Bourguiga, R.

Microelectronic engineering, 2017-07, Vol.179, p.37-47 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Characterization and modeling of organic thin-film transistors based π-conjugated small molecule tetraphenyldibenzoperiflanthene: Effects of channel length
Characterization and modeling of organic thin-film transistors based π-conjugated small molecule tetraphenyldibenzoperiflanthene: Effects of channel length
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Characterization and modeling of organic thin-film transistors based π-conjugated small molecule tetraphenyldibenzoperiflanthene: Effects of channel length

Boukhili, W. ; Mahdouani, M. ; Bourguiga, R. ; Puigdollers, J.

Microelectronic engineering, 2016-07, Vol.160, p.39-48 [Periódico revisado por pares]

Elsevier B.V

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7
Investigation of the exciton emission lifetime in type-II spherical core/shell semiconductor heteronanostructures
Investigation of the exciton emission lifetime in type-II spherical core/shell semiconductor heteronanostructures
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Investigation of the exciton emission lifetime in type-II spherical core/shell semiconductor heteronanostructures

Arfaoui, A. ; Mahdouani, M. ; Bourguiga, R.

Physica. B, Condensed matter, 2017-08, Vol.518, p.68-76 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Analytic model for ZnO-thin film transistor under dark and UV illumination
Analytic model for ZnO-thin film transistor under dark and UV illumination
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Analytic model for ZnO-thin film transistor under dark and UV illumination

Mansouri, S. ; Bourguiga, R. ; Yakuphanoglu, F.

Current Applied Physics, 2012, 12(6), , pp.1619-1623 [Periódico revisado por pares]

Elsevier B.V

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9
Organic insulator layer influence on the electrical properties of N, N’-di (2-ethylhexyl) - 3, 4, 9, 10-perylene diimide organic thin-film transistors: Experiment and modeling
Organic insulator layer influence on the electrical properties of N, N’-di (2-ethylhexyl) - 3, 4, 9, 10-perylene diimide organic thin-film transistors: Experiment and modeling
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Organic insulator layer influence on the electrical properties of N, N’-di (2-ethylhexyl) - 3, 4, 9, 10-perylene diimide organic thin-film transistors: Experiment and modeling

Boukhili, W. ; Tozlu, C. ; Bourguiga, R. ; Wageh, S.

Chinese journal of physics (Taipei), 2018-10, Vol.56 (5), p.1964-1976 [Periódico revisado por pares]

Elsevier B.V

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10
Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on S -Parameters Measured at Normal Bias Conditions
Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on S -Parameters Measured at Normal Bias Conditions
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Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on S -Parameters Measured at Normal Bias Conditions

Oudir, A. ; Mahdouani, M. ; Bourguiga, R.

IEEE transactions on microwave theory and techniques, 2011-08, Vol.59 (8), p.1973-1982 [Periódico revisado por pares]

New York, NY: IEEE

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