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Material Type: Artigo
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Perylene-based columnar liquid crystal revealing resistive switching for nonvolatile memory devicesLindiomar Borges de Avila Junior Pavel Chulkin; Pablo César Serrano Arambulo; Juliana Priscila Dreyer; Melissa Berteau Rainville; Emanuele Orgiu; L. D.L França; Lizandra Maria Zimmermann; Harald Bock; Gregório Couto Faria; Juliana Eccher; Ivan Helmuth BechtoldJournal of Molecular Liquids Amsterdam v. 402, p. 124757-1-124757-8 + supplementary data, May 2024Amsterdam 2024Localização: IFSC - Inst. Física de São Carlos (PROD035825 )(Acessar) |
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Material Type: Artigo
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ReRAM: History, Status, and FutureChen, YangyinIEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1420-1433 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Resistive Random Access Memory (ReRAM) Based on Metal OxidesAkinaga, Hiroyuki ; Shima, HisashiProceedings of the IEEE, 2010-12, Vol.98 (12), p.2237-2251 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Spin-Transfer Torque Memories: Devices, Circuits, and SystemsFong, Xuanyao ; Kim, Yusung ; Venkatesan, Rangharajan ; Choday, Sri Harsha ; Raghunathan, Anand ; Roy, KaushikProceedings of the IEEE, 2016-07, Vol.104 (7), p.1449-1488 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Resistive Crossbars as Approximate Hardware Building Blocks for Machine Learning: Opportunities and ChallengesChakraborty, Indranil ; Ali, Mustafa ; Ankit, Aayush ; Jain, Shubham ; Roy, Sourjya ; Sridharan, Shrihari ; Agrawal, Amogh ; Raghunathan, Anand ; Roy, KaushikProceedings of the IEEE, 2020-12, Vol.108 (12), p.2276-2310 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase DistributionLiu, You-Sheng ; Su, PinIEEE electron device letters, 2020-03, Vol.41 (3), p.369-372 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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MCAM: Memductance Components Adaptive Model for Efficient Modeling of Memductance of Memristive Devices for Neuromorphic Circuits and SystemsSichani, Ali Shiri ; Moreno, Wilfrido A.IEEE transactions on computer-aided design of integrated circuits and systems, 2024, p.1-1 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data ProcessingChang, Meng-Fan ; Lin, Chien-Chen ; Lee, Albert ; Chiang, Yen-Ning ; Kuo, Chia-Chen ; Yang, Geng-Hau ; Tsai, Hsiang-Jen ; Chen, Tien-Fu ; Sheu, Shyh-ShyuanIEEE journal of solid-state circuits, 2017-06, Vol.52 (6), p.1664-1679 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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A New Approach for Reconfigurable Multifunction Logic-in-Memory Using Complementary Ferroelectric-FET (CFeFET)Huang, Yuan-Yu ; Huang, Po-Tsang ; Lee, Po-Yi ; Su, PinIEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4497-4500 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals HeterostructuresLi, Jingyu ; Liu, Lan ; Chen, Xiaozhang ; Liu, Chunsen ; Wang, Jianlu ; Hu, Weida ; Zhang, David Wei ; Zhou, PengAdvanced materials (Weinheim), 2019-03, Vol.31 (11), p.e1808035-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |