Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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0.1 - 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulationsSayginer, M. ; Yazgi, M. ; Kuntman, H.2011 IEEE 19th Signal Processing and Communications Applications Conference (SIU), 2011, p.841-844IEEETexto completo disponível |
2 |
Material Type: Ata de Congresso
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0.1-μm high-aspect-ratio pattern replication and linewidth controlChen, Zheng ; Vladimirsky, Yuli ; Cerrina, Franco ; Lai, Barry P ; Yun, Wenbing ; Gluskin, Efim SSPIE proceedings series, 1998, Vol.3331, p.591-600Bellingham WA: SPIETexto completo disponível |
3 |
Material Type: Ata de Congresso
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0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
4 |
Material Type: Ata de Congresso
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0.11-μm imaging in KrF lithography using dipole illuminationEurlings, Mark ; van Setten, Eelco ; Torres, Juan Andres ; Dusa, Mircea V ; Socha, Robert J ; Capodieci, Luigi ; Finders, JoSPIE proceedings series, 2001, Vol.4404, p.266-278Bellingham WA: SPIETexto completo disponível |
5 |
Material Type: Ata de Congresso
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0.12 micron logic process using a 248 nm step-and-scan systemBAKER, Dan ; ZHENG, Tammy ; TAKEMOTO, Cliff ; SETHI, Satyendra ; GABRIEL, Calvin ; SCOTT, GregSPIE proceedings series, 2000, p.294-304Bellingham WA: SPIETexto completo disponível |
6 |
Material Type: Ata de Congresso
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0.12-μm logic process using a 248-nm step-and-scan systemBaker, Daniel C ; Zheng, Tammy ; Takemoto, Clifford H ; Sethi, Satyendra S ; Gabriel, Calvin ; Scott, Gregory SSPIE 2000Texto completo disponível |
7 |
Material Type: Ata de Congresso
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0.13μm BiCMOS emitter window lithography with KrF scannersCHOU, Li-Heng ; PATEL, Neil S ; MCCARTHY, Patrick MProceedings of SPIE, the International Society for Optical Engineering, 2009, Vol.7274Bellingham, Wash: SPIETexto completo disponível |
8 |
Material Type: Ata de Congresso
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0.15 μm gate length MHEMT technology for 77GHz automotive radar applicationsJIN HEE LEE ; HYUNG SUP YOON ; JAE YEOB SHIM ; JU YEON HONG ; DONG MIN KANG ; HAE CHEON KIM ; KYUNG IK CHO ; KYUNG HO LEE ; BOO WOO KIMPiscataway NJ: IEEE 2004Texto completo disponível |
9 |
Material Type: Ata de Congresso
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0.18 μm CMOS fully differential CTIA for a 32x16 ROIC for 3D ladar imaging systemsHelou, Jirar N ; Garcia, Jorge ; Sarmiento, Mayra ; Kiamilev, Fouad ; Lawler, WilliamProceedings of SPIE, the International Society for Optical Engineering, 2006, Vol.6294, p.629409-629409-13Bellingham, Wash: SPIETexto completo disponível |
10 |
Material Type: Ata de Congresso
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0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband systemMaisurah, S. ; Wong Sew Kin ; Kung, F. ; See Jin Hui2007 International Symposium on Integrated Circuits, 2007, p.100-103IEEETexto completo disponível |