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1 |
Material Type: Artigo
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Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InPOsvaldo M. Braga Cristian A Delfino; Rudy M. S Kawabata; Luciana Dornelas Pinto; Gustavo S Vieira; Mauricio P Pires; Patrícia Lustoza de Souza; Euclydes Marega Júnior; John A Carlin; Sanjay KrishnaIEEE Sensors Journal Piscataway : Institute of Electrical and Electronics Engineers - IEEE v. 20, n. 16, p. 9234-9244, July 2020Piscataway 2020Localização: IFSC - Inst. Física de São Carlos (PROD030409 )(Acessar) |
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Material Type: Dissertação de Mestrado
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Determinação da corrente de escuro em fotodetectores de radiação infravermelha baseados em poços quânticos (QWIPs)Claro, Marcel SantosBiblioteca Digital de Teses e Dissertações da USP; Universidade de São Paulo; Instituto de Física 2013-03-12Acesso online |
3 |
Material Type: Artigo
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WSe 2 Photovoltaic Device Based on Intramolecular p-n JunctionTang, Yicheng ; Wang, Zhen ; Wang, Peng ; Wu, Feng ; Wang, Yueming ; Chen, Yunfeng ; Wang, Hailu ; Peng, Meng ; Shan, Chongxin ; Zhu, Zhihong ; Qin, Shiqiao ; Hu, WeidaSmall (Weinheim an der Bergstrasse, Germany), 2019-03, Vol.15 (12), p.e1805545 [Periódico revisado por pares]GermanyTexto completo disponível |
4 |
Material Type: Artigo
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Self‐Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact GeometriesZhou, Changjian ; Raju, Salahuddin ; Li, Bin ; Chan, Mansun ; Chai, Yang ; Yang, Cary Y.Advanced functional materials, 2018-11, Vol.28 (45), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
5 |
Material Type: Artigo
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Highly Sensitive Low‐Bandgap Perovskite Photodetectors with Response from Ultraviolet to the Near‐Infrared RegionWang, Wenbin ; Zhao, Dewei ; Zhang, Fujun ; Li, Ludong ; Du, Mingde ; Wang, Changlei ; Yu, Yue ; Huang, Qianqian ; Zhang, Miao ; Li, Lingliang ; Miao, Jianli ; Lou, Zheng ; Shen, Guozhen ; Fang, Ying ; Yan, YanfaAdvanced functional materials, 2017-11, Vol.27 (42), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
6 |
Material Type: Artigo
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Waveguide-integrated black phosphorus photodetector with high responsivity and low dark currentYoungblood, Nathan ; Chen, Che ; Koester, Steven J ; Li, MoNature photonics, 2015-04, Vol.9 (4), p.247-252 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
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Material Type: Artigo
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Investigating Dark Current Random Telegraph Signal in an HgCdTe H4RG-10 Infrared Detector for Space ApplicationAntonsanti, Aubin ; Ryder, Landen D. ; Le Roch, Alexandre ; Waczynski, Augustyn ; Miko, Laddawan ; Delo, Greg ; Cillis, Analia ; Waczynski, Stefan ; Feggans, Keith ; Barth, Jonathan D. ; Goiffon, Vincent ; Virmontois, Cedric ; Hill, Robert J. ; Wollack, Edward ; Lauenstein, Jean-MarieIEEE transactions on nuclear science, 2024, p.1-1 [Periódico revisado por pares]IEEETexto completo disponível |
8 |
Material Type: Artigo
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Displacement Damage Effects in Backside Illuminated CMOS Image SensorsLiu, Bingkai ; Li, Yudong ; Wen, Lin ; Zhao, Jinghao ; Zhou, Dong ; Feng, Jie ; Guo, QiIEEE transactions on electron devices, 2022-06, Vol.69 (6), p.2907-2914 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Enhancement-Mode \beta -Ga2O3 Metal-Oxide-Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current RatioQin, Yuan ; Dong, Hang ; Long, Shibing ; He, Qiming ; Jian, Guangzhong ; Zhang, Ying ; Zhou, Xuanze ; Yu, Yangtong ; Hou, Xiaohu ; Tan, Pengju ; Zhang, Zhongfang ; Liu, Qi ; Lv, Hangbing ; Liu, MingIEEE electron device letters, 2019-05, Vol.40 (5), p.742-745 [Periódico revisado por pares]IEEETexto completo disponível |
10 |
Material Type: Artigo
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Erratum: “A designing principle for low dark-current strained layer superlattices” [Appl. Phys. Lett. 110, 021113 (2017)]Krishnamurthy, S. ; Yu, Zhi-GangApplied physics letters, 2017-02, Vol.110 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |