Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Outros
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The value-added content of tradeAntônio Delfim Netto 1928-S.l. s.n. 200-Localização: FEA - Fac. Econ. Adm. Contab. e Atuária ACERVO DELFIM NETTO (C6.14.10 )(Acessar) |
2 |
Material Type: Artigo
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Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force MicroscopyMinj, A ; Cros, A ; Garro, N ; Colchero, J ; Auzelle, T ; Daudin, BNano letters, 2015-10, Vol.15 (10), p.6770-6776 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
3 |
Material Type: Artigo
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From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layerSongmuang, R. ; Landré, O. ; Daudin, B.Applied physics letters, 2007-12, Vol.91 (25), p.251902-251902-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN NanowiresBelloeil, M ; Gayral, B ; Daudin, BNano letters, 2016-02, Vol.16 (2), p.960-966 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
5 |
Material Type: Artigo
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Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxyLandré, O ; Bougerol, C ; Renevier, H ; Daudin, BNanotechnology, 2009-10, Vol.20 (41), p.415602-415602 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
6 |
Material Type: Artigo
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Nanoscale x-ray investigation of composition fluctuations in AlGaN nanowiresBelloeil, M ; Proietti, M G ; Renevier, H ; Daudin, BNanotechnology, 2020-09, Vol.31 (37), p.375709-375709 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
7 |
Material Type: Artigo
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Growth mechanism and properties of InGaN insertions in GaN nanowiresTourbot, G ; Bougerol, C ; Glas, F ; Zagonel, L F ; Mahfoud, Z ; Meuret, S ; Gilet, P ; Kociak, M ; Gayral, B ; Daudin, BNanotechnology, 2012-04, Vol.23 (13), p.135703-1-6 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
8 |
Material Type: Artigo
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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBETourbot, G ; Bougerol, C ; Grenier, A ; Den Hertog, M ; Sam-Giao, D ; Cooper, D ; Gilet, P ; Gayral, B ; Daudin, BNanotechnology, 2011-02, Vol.22 (7), p.075601-075601 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
9 |
Material Type: Artigo
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Growth, structural and optical properties of AlGaN nanowires in the whole composition rangePierret, A ; Bougerol, C ; Murcia-Mascaros, S ; Cros, A ; Renevier, H ; Gayral, B ; Daudin, BNanotechnology, 2013-03, Vol.24 (11), p.115704-115704 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
10 |
Material Type: Artigo
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Identification of III–N nanowire growth kinetics via a marker techniqueSongmuang, R ; Ben, T ; Daudin, B ; González, D ; Monroy, ENanotechnology, 2010-07, Vol.21 (29), p.295605-295605 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |