Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Low-Frequency Noise in InGaAs-OI TransistorsMarquez, Carlos ; Navarro, Carlos ; Karg, Siegfried ; Ortega, Ruben ; Zota, Cezar ; Gamiz, FranciscoIEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3964-3969 [Periódico revisado por pares]New York: IEEETexto completo disponível |
2 |
Material Type: Artigo
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Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAsVirmontois, C. ; Belloir, J.-M. ; Pistre, L. ; Patier, L. ; Gilard, O. ; Bardoux, A. ; Goiffon, V. ; Reverchon, J.-L. ; Colin, T. ; Berdin, E. ; Saint-Pe, O.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.770-776 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode DevicesGuo, Zilu ; Wang, Wenjuan ; Li, Yangjun ; Qu, Huidan ; Fan, Liuyan ; Chen, Xiren ; Zhu, Yicheng ; Gu, Yue ; Wang, Yajie ; Zheng, Changlin ; Chen, Pingping ; Lu, WeiIEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4944-4949 [Periódico revisado por pares]New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding LayerKe, Shaoying ; Xiao, Xiaoting ; Jiao, Jinlong ; Chen, Xiaoqiang ; Huang, Zhiwei ; Zhou, Jinrong ; Chen, SongyanIEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1123-1128 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Electric Field-Enhanced Generation Current in Proton Irradiated InGaAs PhotodiodesBenfante, Marco ; Reverchon, Jean-Luc ; Gilard, Olivier ; Demiguel, Stephane ; Virmontois, Cedric ; Durnez, Clementine ; Dartois, Thierry ; Goiffon, VincentIEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.523-531 [Periódico revisado por pares]New York: IEEETexto completo disponível |
6 |
Material Type: Artigo
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Corrections to "2.45-μm 1280 × 1024 InGaAs Focal Plane Array With 15-μm Pitch for Extended SWIR Imaging" [Feb 15 2022 231-234]Cheng, J. F. ; Li, X. ; Shao, X. M. ; Li, T. ; Ma, Y. J. ; Gu, Y. ; Deng, S. Y. ; Zhang, Y. G. ; Gong, H. M.IEEE photonics technology letters, 2022-03, Vol.34 (6), p.305-305New York: IEEETexto completo disponível |
7 |
Material Type: Artigo
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Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off TechniquesKim, Seong Kwang ; Shim, Jae-Phil ; Geum, Dae-Myeong ; Kim, Chang Zoo ; Kim, Han-Sung ; Song, Jin Dong ; Choi, Sung-Jin ; Kim, Dae Hwan ; Choi, Won Jun ; Kim, Hyung-Jun ; Kim, Dong Myong ; Kim, SanghyeonIEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3601-3608 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP SubstratesBonaldo, Stefano ; Zhang, En Xia ; Zhao, Simeng E. ; Putcha, Vamsi ; Parvais, Bertrand ; Linten, Dimitri ; Gerardin, Simone ; Paccagnella, Alessandro ; Reed, Robert A. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M.IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1312-1319 [Periódico revisado por pares]New York: IEEETexto completo disponível |
9 |
Material Type: Artigo
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Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs PhotodiodesBenfante, Marco ; Reverchon, Jean-Luc ; Virmontois, Cedric ; Demiguel, Stephane ; Goiffon, VincentIEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.719-727 [Periódico revisado por pares]New York: IEEETexto completo disponível |
10 |
Material Type: Artigo
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Dark Current Random Telegraph Signal in Proton Irradiated Single InGaAs PhotodiodesBenfante, Marco ; Reverchon, Jean-Luc ; Durnez, Clementine ; Virmontois, Cedric ; Demiguel, Stephane ; Goiffon, VincentIEEE transactions on nuclear science, 2024-06, p.1-1 [Periódico revisado por pares]IEEETexto completo disponível |