Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integrationVolz, Kerstin ; Beyer, Andreas ; Witte, Wiebke ; Ohlmann, Jens ; Németh, Igor ; Kunert, Bernardette ; Stolz, WolfgangJournal of crystal growth, 2011-01, Vol.315 (1), p.37-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
2 |
Material Type: Artigo
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Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diodeHepp, Thilo ; Lehr, Jannik ; Günkel, Robin ; Maßmeyer, Oliver ; Glowatzki, Johannes ; Ruiz Perez, Antje ; Reinhard, Stefan ; Stolz, Wolfgang ; Volz, KerstinElectronics letters, 2022-01, Vol.58 (2), p.70-72 [Periódico revisado por pares]WileyTexto completo disponível |
3 |
Material Type: Artigo
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Optical gain in GaAsBi/GaAs quantum well diode lasersMarko, Igor P ; Broderick, Christopher A ; Jin, Shirong ; Ludewig, Peter ; Stolz, Wolfgang ; Volz, Kerstin ; Rorison, Judy M ; O'Reilly, Eoin P ; Sweeney, Stephen JScientific reports, 2016-07, Vol.6 (1), p.28863-28863, Article 28863 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
4 |
Material Type: Artigo
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Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imagingVolz, Kerstin ; Torunski, Torsten ; Stolz, WolfgangJournal of applied physics, 2005-01, Vol.97 (1), p.014306-014306-4 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Pyramidal Structure Formation at the Interface between III/V Semiconductors and SiliconBeyer, Andreas ; Stegmüller, Andreas ; Oelerich, Jan O ; Jandieri, Kakhaber ; Werner, Katharina ; Mette, Gerson ; Stolz, Wolfgang ; Baranovskii, Sergei D ; Tonner, Ralf ; Volz, KerstinChemistry of materials, 2016-05, Vol.28 (10), p.3265-3275 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
6 |
Material Type: Artigo
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Sub-picosecond acoustic pulses at buried GaP/Si interfacesIshioka, Kunie ; Rustagi, Avinash ; Beyer, Andreas ; Stolz, Wolfgang ; Volz, Kerstin ; Höfer, Ulrich ; Petek, Hrvoje ; Stanton, Christopher J.Applied physics letters, 2017-08, Vol.111 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)Beyer, Andreas ; Németh, Igor ; Liebich, Sven ; Ohlmann, Jens ; Stolz, Wolfgang ; Volz, KerstinJournal of applied physics, 2011-04, Vol.109 (8), p.083529-083529-6 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonicsBroderick, Christopher A. ; Jin, Shirong ; Marko, Igor P. ; Hild, Konstanze ; Ludewig, Peter ; Bushell, Zoe L. ; Stolz, Wolfgang ; Rorison, Judy M. ; O’Reilly, Eoin P. ; Volz, Kerstin ; Sweeney, Stephen J.Scientific reports, 2017-04, Vol.7 (1), p.46371-46371, Article 46371 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
9 |
Material Type: Artigo
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High-Power Optically Pumped Semiconductor Laser at 1040 nmTsuei-Lian Wang ; Kaneda, Yushi ; Yarborough, J M ; Hader, Jorg ; Moloney, Jerome V ; Chernikov, Alexej ; Chatterjee, Sangam ; Koch, Stephan W ; Kunert, Bernardette ; Stolz, WolfgangIEEE photonics technology letters, 2010-05, Vol.22 (9), p.661-663New York: IEEETexto completo disponível |
10 |
Material Type: Artigo
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The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-based "W"-lasersDuffy, Dominic A. ; Marko, Igor P. ; Fuchs, Christian ; Stolz, Wolfgang ; Sweeney, Stephen J.IEEE journal of selected topics in quantum electronics, 2024-07, p.1-10 [Periódico revisado por pares]IEEETexto completo disponível |