Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Low frequency noise and trap density in GaN/AlGaN field effect transistorsSai, P. ; Jorudas, J. ; Dub, M. ; Sakowicz, M. ; Jakštas, V. ; But, D. B. ; Prystawko, P. ; Cywinski, G. ; Kašalynas, I. ; Knap, W. ; Rumyantsev, S.Applied physics letters, 2019-10, Vol.115 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detectorDyakonova, N. ; Faltermeier, P. ; But, D. B. ; Coquillat, D. ; Ganichev, S. D. ; Knap, W. ; Szkudlarek, K. ; Cywinski, G.Journal of applied physics, 2016-10, Vol.120 (16), p.164507 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Ata de Congresso
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Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronicsDub, M. ; Sai, P. ; Przewloka, A. ; But, D. B. ; Sakowicz, M. ; Haras, M. ; Krajewska, A. ; Pasternak, I. ; Prystawko, P. ; Cywinski, G. ; Knap, W. ; Rumyantsev, S.2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022, p.1-2IEEESem texto completo |