Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Modeling of HCD Kinetics Under Full VG-VD Space, Different Experimental Conditions and Across Different Device ArchitecturesSharma, Uma ; Mahapatra, SouvikIEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
2 |
Material Type: Artigo
|
First record of the spatial organization of the nucleosome‐less chromatin of dinoflagellates: The nonrandom distribution of microsatellites and bipolar arrangement of telomeres in the nucleus of Gambierdiscus australes (Dinophyceae)Cuadrado, Ángeles ; Figueroa, Rosa I. ; Sixto, Marta ; Bravo, Isabel ; De Bustos, Alfredo ; Lin, S. Lin, S.Journal of phycology, 2022-04, Vol.58 (2), p.297-307 [Periódico revisado por pares]United States: Wiley Subscription Services, IncTexto completo disponível |
|
3 |
Material Type: Artigo
|
A 32 nm 0.58-fJ/Bit/Search 1-GHz Ternary Content Addressable Memory Compiler Using Silicon-Aware Early-Predict Late-Correct Sensing With Embedded Deep-Trench Capacitor Noise MitigationArsovski, I. ; Hebig, T. ; Dobson, D. ; Wistort, R.IEEE journal of solid-state circuits, 2013-04, Vol.48 (4), p.932-939 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
4 |
Material Type: Artigo
|
High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash MemoryWang, Kuan-Ti ; Chao, Tien-Sheng ; Wu, Woei-Cherng ; Yang, Wen-Luh ; Lee, Chien-Hsing ; Hsieh, Tsung-Min ; Liou, Jhyy-Cheng ; Wang, Shen-De ; Chen, Tzu-Ping ; Chen, Chien-Hung ; Lin, Chih-Hung ; Chen, Hwi-HuangIEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2335-2338 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
5 |
Material Type: Artigo
|
A novel self-aligned highly reliable sidewall split-gate flash memoryCaleb Yu-Sheng Cho ; Ming-Jer Chen ; Chiou-Feng Chen ; Tuntasood, P. ; Fan, D.-T. ; Tseng-Yi LiuIEEE transactions on electron devices, 2006-03, Vol.53 (3), p.465-473 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
6 |
Material Type: Artigo
|
A strategy to emulate NOR flash with NAND flashChang, Yuan-Hao ; Lin, Jian-Hong ; Hsieh, Jen-Wei ; Kuo, Tei-WeiACM transactions on storage, 2010-07, Vol.6 (2), p.1-23 [Periódico revisado por pares]Texto completo disponível |
|
7 |
Material Type: Artigo
|
Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuitGan, Kwang-Jow ; Tsai, Cher-Shiung ; Hsien, Chi-Wen ; Li, Yu-Kuang ; Yeh, Wen-KuanAnalog integrated circuits and signal processing, 2011-09, Vol.68 (3), p.379-385 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
|
8 |
Material Type: Ata de Congresso
|
A NOR Emulation Strategy over NAND Flash MemoryJian-Hong Lin ; Yuan-Hao Chang ; Jen-Wei Hsieh ; Tei-Wei Kuo ; Cheng-Chih Yang13th IEEE International Conference on Embedded and Real-Time Computing Systems and Applications (RTCSA 2007), 2007, p.95-102IEEETexto completo disponível |
|
9 |
Material Type: Artigo
|
Future challenges of flash memory technologiesLu, Chih-Yuan ; Hsieh, Kuang-Yeu ; Liu, RichMicroelectronic engineering, 2009-03, Vol.86 (3), p.283-286 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
10 |
Material Type: Artigo
|
Nucleolus and chromatinSchöfer, Christian ; Weipoltshammer, KlaraHistochemistry and cell biology, 2018-09, Vol.150 (3), p.209-225 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |