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Effect of Deposition Technique of SiN x Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
Effect of Deposition Technique of SiN x Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
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Effect of Deposition Technique of SiN x Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs

Yağmur Güler ; Barış Onaylı ; Mehmet Taha Haliloğlu ; Doğan Yılmaz ; Tarık Asar ; Ekmel Özbay

Transactions on Electrical and Electronic Materials, 2024, 25(2), , pp.180-186 [Periódico revisado por pares]

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Investigation of Substitution of Nickel Cations in Cobalt Ferrite (CoFe2O4 ) Nanoparticles and Their Infl uence on Frequency and Temperature Dependent Dielectric and Magnetodielectric Properties
Investigation of Substitution of Nickel Cations in Cobalt Ferrite (CoFe2O4 ) Nanoparticles and Their Infl uence on Frequency and Temperature Dependent Dielectric and Magnetodielectric Properties
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Investigation of Substitution of Nickel Cations in Cobalt Ferrite (CoFe2O4 ) Nanoparticles and Their Infl uence on Frequency and Temperature Dependent Dielectric and Magnetodielectric Properties

Biswajita Dash ; Krutika L. Routray ; Sunirmal Saha ; Satoru Yoshimura ; Soumyaranjan Ratha ; Manoj Ku Rout

Transactions on Electrical and Electronic Materials, 2024, 25(2), , pp.232-246 [Periódico revisado por pares]

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Design and Numerical Investigation of CsSn0.5 Ge0.5 I3 Perovskite Photodetector with Optimized Performances
Design and Numerical Investigation of CsSn0.5 Ge0.5 I3 Perovskite Photodetector with Optimized Performances
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Design and Numerical Investigation of CsSn0.5 Ge0.5 I3 Perovskite Photodetector with Optimized Performances

Kamal Mishra ; R. K. Chauhan ; Rajan Mishra ; Vaibhava Srivastava

Transactions on Electrical and Electronic Materials, 2024, 25(1), , pp.67-76 [Periódico revisado por pares]

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A Sound Activity Monitor with 96.3 μs Wake-up Time and 2.5 μW Power Consumption
A Sound Activity Monitor with 96.3 μs Wake-up Time and 2.5 μW Power Consumption
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A Sound Activity Monitor with 96.3 μs Wake-up Time and 2.5 μW Power Consumption

Kim, Jinkee ; Jang, Yunyoung ; Kim, Jong-Pal

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.375-381

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Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress
Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress
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Time- and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress

Chae, Myeongsu ; Kim, Hyungtak

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.352-358

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6
Design of a Vertical Cylinder GaN Junctionless FET based on its GaN-on-GaN Substrate and Electrical Performance
Design of a Vertical Cylinder GaN Junctionless FET based on its GaN-on-GaN Substrate and Electrical Performance
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Design of a Vertical Cylinder GaN Junctionless FET based on its GaN-on-GaN Substrate and Electrical Performance

Jeon, So-Ra ; Lee, Sang-Ho ; Park, Jin ; Kang, Ga-Eon ; Heo, Jun Hyeok ; Kim, Min Seok ; Bae, Seung Ji ; Hong, Jeong Woo ; Kang, In Man

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.359-366

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Compact Modeling of a HfO₂ Memristor Cell with Dependence on Compliance Current for Large-area Simulations
Compact Modeling of a HfO₂ Memristor Cell with Dependence on Compliance Current for Large-area Simulations
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Compact Modeling of a HfO₂ Memristor Cell with Dependence on Compliance Current for Large-area Simulations

Joshi, Saurabh Suredra ; Kim, Soomin ; Kim, Chang-Hyun ; Cho, Seongjae

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.382-388

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8
D-RDMALib: InfiniBand-based RDMA Library for Distributed Cluster Applications
D-RDMALib: InfiniBand-based RDMA Library for Distributed Cluster Applications
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D-RDMALib: InfiniBand-based RDMA Library for Distributed Cluster Applications

Jeong, Laewon ; Gil, Myeong-Seon ; Moon, Yang-Sae

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.341-351

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9
Analysis of Device Parameter Variations in In 1-x Ga x As Based Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET
Analysis of Device Parameter Variations in In 1-x Ga x As Based Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET
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Analysis of Device Parameter Variations in In 1-x Ga x As Based Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET

Parveen Kumar ; Sanjeev Kumar Sharma ; Balwinder Raj

Transactions on Electrical and Electronic Materials, 2023, 24(6), , pp.570-578 [Periódico revisado por pares]

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10
A Single-ring-oscillator based True-random-number-generator with 3-edges Collapse
A Single-ring-oscillator based True-random-number-generator with 3-edges Collapse
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A Single-ring-oscillator based True-random-number-generator with 3-edges Collapse

Eunhwan Kim ; Jae-Joon Kim

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023, 23(6), 114, pp.396-402

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