Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin filmsBoota, M. ; Houwman, E. P. ; Lanzara, G. ; Rijnders, G.Journal of applied physics, 2023-04, Vol.133 (14) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Optimized fabrication of high-quality La0.67Sr0.33MnO3 thin films considering all essential characteristicsBoschker, H ; Huijben, M ; Vailionis, A ; Verbeeck, J ; van Aert, S ; Luysberg, M ; Bals, S ; van Tendeloo, G ; Houwman, E P ; Koster, G ; Blank, D H A ; Rijnders, GJournal of physics. D, Applied physics, 2011-05, Vol.44 (20), p.205001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitorsDo, M T ; Gauquelin, N ; Nguyen, M D ; Wang, J ; Verbeeck, J ; Blom, F ; Koster, G ; Houwman, E P ; Rijnders, GScientific reports, 2020-04, Vol.10 (1), p.7310-7310, Article 7310 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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4 |
Material Type: Artigo
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The significance of the piezoelectric coefficient d31,eff determined from cantilever structuresDekkers, M ; Boschker, H ; van Zalk, M ; Nguyen, M ; Nazeer, H ; Houwman, E ; Rijnders, GJournal of micromechanics and microengineering, 2013-02, Vol.23 (2) [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundaryHouwman, E P ; Steenwelle, R ; van Schaijk R ; Rijnders, GApplied physics letters, 2014-03, Vol.104 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (67/33) thin films with large tunable self-bias field controlled by a PbZr1−xTixO3 interfacial layerBoota, M. ; Houwman, E. P. ; Dekkers, M. ; Nguyen, M. ; Rijnders, G.Applied physics letters, 2014-05, Vol.104 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Preventing the Reconstruction of the Polar Discontinuity at Oxide HeterointerfacesBoschker, H. ; Verbeeck, J. ; Egoavil, R. ; Bals, S. ; van Tendeloo, G. ; Huijben, M. ; Houwman, E. P. ; Koster, G. ; Blank, D. H. A. ; Rijnders, G.Advanced functional materials, 2012-06, Vol.22 (11), p.2235-2240 [Periódico revisado por pares]Weinheim: WILEY-VCH VerlagTexto completo disponível |
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8 |
Material Type: Artigo
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Process dependence of the piezoelectric response of membrane actuators based on Pb(Zr0.45Ti0.55)O3 thin filmsNguyen, C.T.Q. ; Nguyen, M.D. ; Dekkers, M. ; Houwman, E. ; Vu, H.N. ; Rijnders, G.Thin solid films, 2014-04, Vol.556, p.509-514 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Interface degradation and field screening mechanism behind bipolar-cycling fatigue in ferroelectric capacitorsDo, M. T. ; Gauquelin, N. ; Nguyen, M. D. ; Blom, F. ; Verbeeck, J. ; Koster, G. ; Houwman, E. P. ; Rijnders, G.APL materials, 2021-02, Vol.9 (2), p.021113-021113-7 [Periódico revisado por pares]AIP Publishing LLCTexto completo disponível |
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10 |
Material Type: Artigo
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Magnetization reversal mechanism in La0.67Sr0.33MnO3 thin films on NdGaO3 substratesMathews, M. ; Houwman, E. P. ; Boschker, H. ; Rijnders, G. ; Blank, D. H. A.Journal of applied physics, 2010-01, Vol.107 (1) [Periódico revisado por pares]Texto completo disponível |