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0.040 rad(Si)/s total dose testing of Renesas parts proposed for the Europa Clipper mission
0.040 rad(Si)/s total dose testing of Renesas parts proposed for the Europa Clipper mission
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.040 rad(Si)/s total dose testing of Renesas parts proposed for the Europa Clipper mission

van Vonno, N. W. ; Gill, J. S. ; Ballou, F. C. ; Newman, W. H.

2019 IEEE Radiation Effects Data Workshop, 2019, p.1-8

IEEE

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2
0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth
0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth

Wada, S. ; Furuhata, N. ; Tokushima, M. ; Fukaishi, M. ; Hida, H. ; Maeda, T.

Proceedings of International Electron Devices Meeting, 1995, p.197-200

IEEE

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3
0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications
0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications

Bing-Yue Tsui ; Chia-Pin Lin ; Chih-Feng Huang ; Yi-Hsuan Xiao

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.911-914

IEEE

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4
0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz
0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz

Shealy, J.B. ; Mondry, M.J. ; Heimbuch, M.E. ; Thompson, M.A. ; Denbaars, S.P.

52nd Annual Device Research Conference, 1994, p.153-154

IEEE

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5
0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography
0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography

Jinshu Zhang ; Lo, T.C. ; PeiHsin Tsien

Proceedings of 4th International Conference on Solid-State and IC Technology, 1995, p.238-242

IEEE

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6
0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity
0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity

Ada-Hanifi, M. ; Bonis, M. ; Verove, Ch ; Basso, M.T. ; Revil, N. ; Haond, M. ; Lecontellec, M.

27th European Solid-State Device Research Conference, 1997, p.396-399

Editions Frontieres

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7
0.35 µm AMS silicon MOSFET for continous-wave (CW) sub-THz detection in room temperature
0.35 µm AMS silicon MOSFET for continous-wave (CW) sub-THz detection in room temperature
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.35 µm AMS silicon MOSFET for continous-wave (CW) sub-THz detection in room temperature

Othman, M. A. ; Harrison, I.

2014 International Symposium on Technology Management and Emerging Technologies, 2014, p.471-474

IEEE

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8
0.374 Pflop/s trillion-particle kinetic modeling of laser plasma interaction on roadrunner
0.374 Pflop/s trillion-particle kinetic modeling of laser plasma interaction on roadrunner
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.374 Pflop/s trillion-particle kinetic modeling of laser plasma interaction on roadrunner

Bowers, K.J. ; Albright, B.J. ; Bergen, B. ; Yin, L. ; Barker, K.J. ; Kerbyson, D.J.

2008 SC - International Conference for High Performance Computing, Networking, Storage and Analysis, 2008, p.1-11

IEEE

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9
0.5-/spl mu/m-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-/spl mu/m CMOS applications
0.5-/spl mu/m-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-/spl mu/m CMOS applications
Material Type:
Acta de Congreso 		Añadir a Mi Portal

0.5-/spl mu/m-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-/spl mu/m CMOS applications

Fukuda, T. ; Ohshima, T. ; Aoki, H. ; Maruyama, H. ; Miyazaki, H. ; Konishi, N. ; Fukada, S. ; Yunogami, T. ; Hotta, S. ; Maekawa, A. ; Hinode, K. ; Nojiri, K. ; Tokunaga, T. ; Kobayashi, N.

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.619-622

IEEE

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10
0.6 J/ 3 ns 946 nm Nd:YAG laser
0.6 J/ 3 ns 946 nm Nd:YAG laser
Material Type:
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0.6 J/ 3 ns 946 nm Nd:YAG laser

Kornev, A.F. ; Kovyarov, A. S. ; Pokrovskiy, V.P. ; Balmashnov, R.V.

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

IEEE

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