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Refinado por: Nome da Publicação: Applied Physics Letters remover
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1
Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
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Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates

Bruno, A. ; de Lange, G. ; Asaad, S. ; van der Enden, K. L. ; Langford, N. K. ; DiCarlo, L.

Applied physics letters, 2015-05, Vol.106 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
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Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

Kwon, Yongbeom ; Lee, Geonyeop ; Oh, Sooyeoun ; Kim, Jihyun ; Pearton, Stephen J. ; Ren, Fan

Applied physics letters, 2017-03, Vol.110 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography
Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography
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Controllable Si micro-structuring by temporally modulated single-shot femtosecond pulse lithography

Liu, Yang ; Huang, Ji ; Ye, Yunxia ; Liang, Misheng ; Dai, Zijie ; Zhang, Jingjing ; Wang, Xuejiao ; Tao, Yufeng ; Pan, Changji

Applied physics letters, 2024-04, Vol.124 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization
Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization
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Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization

Fujisaki, Sumiko ; Yamaguchi, Yoshihide ; Kobayashi, Hiroyuki ; Shinoda, Kazunori ; Yamada, Masaki ; Hamamura, Hirotaka ; Kawamura, Kohei ; Izawa, Masaru

Applied physics letters, 2022-09, Vol.121 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
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Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Hao, Ronghui ; Fu, Kai ; Yu, Guohao ; Li, Weiyi ; Yuan, Jie ; Song, Liang ; Zhang, Zhili ; Sun, Shichuang ; Li, Xiajun ; Cai, Yong ; Zhang, Xinping ; Zhang, Baoshun

Applied physics letters, 2016-10, Vol.109 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing
Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing
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Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Chen, Kuan-Ming ; Lo, Chiao-Yun ; Chiu, Shih-Ching ; Su, Yi-Hui ; Chang, Yao-Jen ; Chen, Guan-Long ; Lee, Hsin-Han ; Huang, Xin-Yo ; Shih, Cheng-Yi ; Wang, Chih-Yao ; Wang, I-Jung ; Yang, Shan-Yi ; Hsin, Yu-Chen ; Wei, Jeng-Hua ; Sheu, Shyh-Shyuan ; Lo, Wei-Chung ; Chang, Shih-Chieh ; Tseng, Yuan-Chieh

Applied physics letters, 2024-07, Vol.125 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Etching-enabled ultra-scalable micro and nanosculpturing of metal surfaces for enhanced thermal performance
Etching-enabled ultra-scalable micro and nanosculpturing of metal surfaces for enhanced thermal performance
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Etching-enabled ultra-scalable micro and nanosculpturing of metal surfaces for enhanced thermal performance

Upot, Nithin Vinod ; Fazle Rabbi, Kazi ; Bakhshi, Alireza ; Kohler Mendizabal, Johannes ; Jacobi, Anthony M. ; Miljkovic, Nenad

Applied physics letters, 2023-01, Vol.122 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
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Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

Yamada, Shinji ; Sakurai, Hideki ; Osada, Yamato ; Furuta, Kanji ; Nakamura, Toshiyuki ; Kamimura, Ryuichiro ; Narita, Tetsuo ; Suda, Jun ; Kachi, Tetsu

Applied physics letters, 2021-03, Vol.118 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3
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Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3

Chittock, Nicholas J. ; Vos, Martijn F. J. ; Faraz, Tahsin ; Kessels, Wilhelmus M. M. (Erwin) ; Knoops, Harm C. M. ; Mackus, Adriaan J. M.

Applied physics letters, 2020-10, Vol.117 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles
Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles
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Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles

Saha, Pratim K. ; Rana, Kanchan Singh ; Thakur, Navneet ; Parvez, Bazila ; Bhat, Shazan Ahmad ; Ganguly, Swaroop ; Saha, Dipankar

Applied physics letters, 2022-11, Vol.121 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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