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1
Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs
Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs

João Antonio Martino 1959- J.M Rafi; A Mercha; Eddy Simoen; Cor Claeys; Symposium on High Purity Silicon (8 2004 Honolulu, Hawaii)

Claeys, C.L.; Watanabe, M.; Falster, R.; Stallhofer, P. 8. Symposium on High Purity Silicon: proceedings Pennington: The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

2
Physical characterization and reliability aspects of MuGFETs
Physical characterization and reliability aspects of MuGFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Physical characterization and reliability aspects of MuGFETs

Cor Claeys Eddy Simoen; J.M Rafi; Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

3
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Material Type:
Livro 		Adicionar ao Meu Espaço

Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

4
Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body
Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer

Journal de Physique IV Paris: EDP Sciences, 2002 v.12, n.3, may 2002

Paris 2002

Item não circula. Consulte sua biblioteca.(Acessar)

5
Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body
Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer

Journal de Physique IV Paris: EDP Sciences, 2002 v.12, n.3, may 2002

Paris 2002

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Simoen, E
  3. Claeys, C
  4. Rafi, J
  5. Mercha, A

Neste Assunto:

  1. Microeletrônica
  2. Circuitos Integrados Mos
  3. Circuitos Integrados

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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