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Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
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Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer

Kumar, Dayanand ; Aluguri, Rakesh ; Chand, Umesh ; Tseng, Tseung-Yuen

Applied physics letters, 2017-05, Vol.110 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
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Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

Ismail, Muhammad ; Chand, Umesh ; Mahata, Chandreswar ; Nebhen, Jamel ; Kim, Sungjun

Journal of materials science & technology, 2022-01, Vol.96, p.94-102 [Periódico revisado por pares]

Elsevier Ltd

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3
Overview of emerging nonvolatile memory technologies
Overview of emerging nonvolatile memory technologies
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Overview of emerging nonvolatile memory technologies

Meena, Jagan Singh ; Sze, Simon Min ; Chand, Umesh ; Tseng, Tseung-Yuen

Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526 [Periódico revisado por pares]

New York: Springer New York

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4
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
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All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Sivan, Maheswari ; Li, Yida ; Veluri, Hasita ; Zhao, Yunshan ; Tang, Baoshan ; Wang, Xinghua ; Zamburg, Evgeny ; Leong, Jin Feng ; Niu, Jessie Xuhua ; Chand, Umesh ; Thean, Aaron Voon-Yew

Nature communications, 2019-11, Vol.10 (1), p.1-12, Article 5201 [Periódico revisado por pares]

London: Nature Publishing Group

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5
Green synthesis, structural analysis and anticancer activity of dihydropyrimidinone derivatives
Green synthesis, structural analysis and anticancer activity of dihydropyrimidinone derivatives
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Green synthesis, structural analysis and anticancer activity of dihydropyrimidinone derivatives

Dowarah, Jayanta ; Patel, Devanshi ; Marak, Brilliant N ; Yadav, Umesh Chand Singh ; Shah, Pramod Kumar ; Shukla, Pradeep Kumar ; Singh, Ved Prakash

RSC advances, 2021-11, Vol.11 (57), p.35737-35753 [Periódico revisado por pares]

England: Royal Society of Chemistry

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Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
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Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

Chand, Umesh ; Huang, Chun-Yang ; Kumar, Dayanand ; Tseng, Tseung-Yuen

Applied physics letters, 2015-11, Vol.107 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Smart Production System with Random Imperfect Process, Partial Backordering, and Deterioration in an Inflationary Environment
Smart Production System with Random Imperfect Process, Partial Backordering, and Deterioration in an Inflationary Environment
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Smart Production System with Random Imperfect Process, Partial Backordering, and Deterioration in an Inflationary Environment

Yadav, Dharmendra ; Chand, Umesh ; Goel, Ruchi ; Sarkar, Biswajit

Mathematics (Basel), 2023-01, Vol.11 (2), p.440 [Periódico revisado por pares]

Basel: MDPI AG

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8
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
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Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

Chand, Umesh ; Huang, Kuan-Chang ; Huang, Chun-Yang ; Ho, Chia-Hua ; Lin, Chen-Hsi ; Tseng, Tseung-Yuen

Journal of applied physics, 2015-05, Vol.117 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Statistical behavior of the European Energy Exchange-Zero Carbon Freight Index (EEX-ZCFI) assessments in the context of Carbon Emissions Fraction Analysis (CEFA)
Statistical behavior of the European Energy Exchange-Zero Carbon Freight Index (EEX-ZCFI) assessments in the context of Carbon Emissions Fraction Analysis (CEFA)
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Statistical behavior of the European Energy Exchange-Zero Carbon Freight Index (EEX-ZCFI) assessments in the context of Carbon Emissions Fraction Analysis (CEFA)

Kimothi, Sanjeev ; Bhatt, Vyomkesh ; Kumar, Somil ; Gupta, Ashulekha ; Dumka, Umesh Chand

Sustainable futures, 2024-06, Vol.7, p.100164, Article 100164 [Periódico revisado por pares]

Elsevier Ltd

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10
Forming-free bipolar resistive switching in nonstoichiometric ceria films
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Forming-free bipolar resistive switching in nonstoichiometric ceria films

Ismail, Muhammad ; Huang, Chun-Yang ; Panda, Debashis ; Hung, Chung-Jung ; Tsai, Tsung-Ling ; Jieng, Jheng-Hong ; Lin, Chun-An ; Chand, Umesh ; Rana, Anwar Manzoor ; Ahmed, Ejaz ; Talib, Ijaz ; Nadeem, Muhammad Younus ; Tseng, Tseung-Yuen

Nanoscale research letters, 2014-01, Vol.9 (1), p.45-45, Article 45 [Periódico revisado por pares]

New York: Springer New York

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