Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial GrapheneMomeni Pakdehi, Davood ; Schädlich, Philip ; Nguyen, Thi Thuy Nhung ; Zakharov, Alexei A. ; Wundrack, Stefan ; Najafidehaghani, Emad ; Speck, Florian ; Pierz, Klaus ; Seyller, Thomas ; Tegenkamp, Christoph ; Schumacher, Hans WernerAdvanced functional materials, 2020-11, Vol.30 (45), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
2 |
Material Type: Artigo
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Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization dopingOmori, Tomoya ; Ishizuka, Sayaka ; Tanaka, Shunya ; Yasue, Shinji ; Sato, Kosuke ; Ogino, Yuya ; Teramura, Shohei ; Yamada, Kazuki ; Iwayama, Sho ; Miyake, Hideto ; Iwaya, Motoaki ; Takeuchi, Tetsuya ; Kamiyama, Satoshi ; Akasaki, IsamuApplied physics express, 2020-07, Vol.13 (7), p.71008 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
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Optimization of p-cladding layer utilizing polarization doping forBlue-VioletInGaN laser diodesAktas, Muhammed ; Kafar, Anna ; Stanczyk, Szymon ; Marona, Łucja ; Schiavon, Dario ; Grzanka, Szymon ; Wiśniewski, Przemysław ; Perlin, PiotrOptics and laser technology, 2024-10, Vol.177, Article 111144 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
4 |
Material Type: Artigo
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Metal ions induced dielectric and magnetic loss in Co3O4 for electromagnetic wave absorptionLi, Zijing ; Shi, Zhaoxiaohan ; Zhang, Limin ; Wu, HongjingCeramics international, 2023-03, Vol.49 (6), p.8772-8780 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
5 |
Material Type: Artigo
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Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structuresSarollahi, Mirsaeid ; Ghosh, Pijush K. ; Aldawsari, Manal A. ; Davari, Shiva ; Refaei, Malak I. ; Alhelais, Reem ; Mazur, Yuriy I. ; Ware, Morgan E.Journal of luminescence, 2021-12, Vol.240, p.118411, Article 118411 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization DopingKumabe, Takeru ; Yoshikawa, Akira ; Kawasaki, Seiya ; Kushimoto, Maki ; Honda, Yoshio ; Arai, Manabu ; Suda, Jun ; Amano, HiroshiIEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3396-3402 [Periódico revisado por pares]New York: IEEETexto completo disponível |
7 |
Material Type: Artigo
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Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mmLemettinen, Jori ; Chowdhury, Nadim ; Okumura, Hironori ; Kim, Iurii ; Suihkonen, Sami ; Palacios, TomasIEEE electron device letters, 2019-08, Vol.40 (8), p.1245-1248 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devicesWang, Zeheng ; Li, LiangApplied physics. A, Materials science & processing, 2022-08, Vol.128 (8), Article 672 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
9 |
Material Type: Artigo
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Recent development of UV-B laser diodesIwaya, Motoaki ; Tanaka, Shunya ; Omori, Tomoya ; Yamada, Kazuki ; Hasegawa, Ryota ; Shimokawa, Moe ; Yabutani, Ayumu ; Iwayama, Sho ; Sato, Kosuke ; Takeuchi, Tetsuya ; Kamiyama, Satoshi ; Miyake, HidetoJapanese Journal of Applied Physics, 2022-04, Vol.61 (4), p.40501 [Periódico revisado por pares]Tokyo: IOP PublishingTexto completo disponível |
10 |
Material Type: Artigo
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Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodesAktas, Muhammed ; Kafar, Anna ; Stanczyk, Szymon ; Marona, Łucja ; Schiavon, Dario ; Grzanka, Szymon ; Wiśniewski, Przemysław ; Perlin, PiotrOptics and laser technology, 2024-10, Vol.177, p.111144, Article 111144 [Periódico revisado por pares]Texto completo disponível |