Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Evaluation of 10-nm Bulk FinFET RF Performance-Conventional Versus NC-FinFETSingh, R. ; Aditya, K. ; Parihar, S. S. ; Chauhan, Y. S. ; Vega, R. ; Hook, T. B. ; Dixit, A.IEEE electron device letters, 2018-08, Vol.39 (8), p.1246-1249 [Periódico revisado por pares]New York: IEEETexto completo disponível |
2 |
Material Type: Artigo de Congresso
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Carriers mobility extraction methods for triple-gate FinFETCarolina Davanzzo Gomes dos Santos João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008Pennington The Electrochemical Society 2008Item não circula. Consulte sua biblioteca.(Acessar) |
3 |
Material Type: Artigo de Congresso
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Sidewall angle influence on the finFET analog parametersRenato Camargo Giacomini João Antonio Martino 1959-; Marcelo Antonio Pavanello; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)SBMicro 2007Pennington The Electrochemical Society 2007Item não circula. Consulte sua biblioteca.(Acessar) |
4 |
Material Type: Artigo
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A FinFET with one atomic layer channelChen, Mao-Lin ; Sun, Xingdan ; Liu, Hang ; Wang, Hanwen ; Zhu, Qianbing ; Wang, Shasha ; Du, Haifeng ; Dong, Baojuan ; Zhang, Jing ; Sun, Yun ; Qiu, Song ; Alava, Thomas ; Liu, Song ; Sun, Dong-Ming ; Han, ZhengNature communications, 2020-03, Vol.11 (1), p.1205-1205, Article 1205 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
5 |
Material Type: Artigo de Congresso
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Corner effect on capacitance-voltage curves in triple gate FinFETMichele Rodrigues Victor Sonnenberg; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008Pennington The Electrochemical Society 2008Item não circula. Consulte sua biblioteca.(Acessar) |
6 |
Material Type: Artigo
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Bulk FinFET With Low- \kappa Spacers for Continued ScalingSachid, Angada B. ; Min-Cheng Chen ; Chenming HuIEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1861-1864 [Periódico revisado por pares]IEEETexto completo disponível |
7 |
Material Type: Artigo
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Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETsSeoane, Natalia ; Fernandez, Julian G. ; Kalna, Karol ; Comesana, Enrique ; Garcia-Loureiro, AntonioIEEE electron device letters, 2021-10, Vol.42 (10), p.1416-1419 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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FN-CACTI: Advanced CACTI for FinFET and NC-FinFET TechnologiesRavipati, Divya Praneetha ; Kedia, Rajesh ; Van Santen, Victor M. ; Henkel, Jorg ; Panda, Preeti Ranjan ; Amrouch, HussamIEEE transactions on very large scale integration (VLSI) systems, 2022-03, Vol.30 (3), p.339-352 [Periódico revisado por pares]New York: IEEETexto completo disponível |
9 |
Material Type: Artigo
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mu RNG: A 300-950 mV, 323 Gbps/W All-Digital Full-Entropy True Random Number Generator in 14 nm FinFET CMOSMathew, Sanu K. ; Johnston, David ; Satpathy, Sudhir ; Suresh, Vikram ; Newman, Paul ; Anders, Mark A. ; Kaul, Himanshu ; Agarwal, Amit ; Hsu, Steven K. ; Chen, Gregory ; Krishnamurthy, Ram K.IEEE journal of solid-state circuits, 2016-07, Vol.51 (7), p.1695-1704 [Periódico revisado por pares]IEEETexto completo disponível |
10 |
Material Type: Artigo
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Single β-Ga2O3 nanowire based lateral FinFET on SiXu, Siyuan ; Liu, Lining ; Qu, Guangming ; Zhang, Xingfei ; Jia, Chunyang ; Wu, Songhao ; Ma, Yuanxiao ; Lee, Young Jin ; Wang, Guodong ; Park, Ji-Hyeon ; Zhang, Yiyun ; Yi, Xiaoyan ; Wang, Yeliang ; Li, JinminApplied physics letters, 2022-04, Vol.120 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |