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1 |
Material Type: Artigo de Congresso
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Swift heavy ion irradiation as a tool for creating novel nanoelectronic structuresD. Fink L. T Chadderton; A Kiv; A Saad; Manfredo Tabacniks; Marcia Rizzutto; A. De O. D Silva; W. R Fahrner; K Hoppe; International Meeting on Recent Developments in the Study of Radiation Effects in Matter 05 a 08 de dezembro de 2006 Playa del Carmen, México 1stRadiation Effects and Defects in Solids Milton Park: Taylor and Francis, 2007 v. 162, n. 7-8, p. 543-555, 20 de novembro de 2007Milton Park 2007Item não circula. Consulte sua biblioteca.(Acessar) |
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Material Type: Artigo
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A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance PhenomenonSeo, Seunghwan ; Cho, Jeong‐Ick ; Jung, Kil‐Su ; Andreev, Maksim ; Lee, Ju‐Hee ; Ahn, Hogeun ; Jung, Sooyoung ; Lee, Taeran ; Kim, Byeongchan ; Lee, Seojoo ; Kang, Juncheol ; Lee, Kyeong‐Bae ; Lee, Ho‐Jun ; Kim, Ki Seok ; Yeom, Geun Young ; Heo, Keun ; Park, Jin‐HongAdvanced materials (Weinheim), 2022-09, Vol.34 (36), p.e2202799-n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |
3 |
Material Type: Artigo
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Junctionless Negative‐Differential‐Resistance Device Using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel ComputingLee, Taeran ; Jung, Kil‐Su ; Seo, Seunghwan ; Lee, Junseo ; Park, Jihye ; Kang, Sumin ; Park, Jeongwon ; Kang, Juncheol ; Ahn, Hogeun ; Kim, Suhyun ; Lee, Hae Won ; Lee, Doyoon ; Kim, Ki Seok ; Kim, Hyunseok ; Heo, Keun ; Kim, Sunmean ; Bae, Sang‐Hoon ; Kang, Seokhyeong ; Kang, Kibum ; Kim, Jeehwan ; Park, Jin‐HongAdvanced materials (Weinheim), 2024-06, Vol.36 (24), p.e2310015-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
4 |
Material Type: Artigo
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Ion Number Density Quantification Utilizing Pulsing Frequency in Negative Differential Resistance (NDR) Regime of Microplasma OperationMahamud, Rajib ; Farouk, TanvirIEEE transactions on plasma science, 2020-08, Vol.48 (8), p.2736-2741 [Periódico revisado por pares]United States: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS2 Quantum Dots for Resistive Random‐Access Memory DevicesSharma, Sonia ; Chen, Yu‐Ting ; Santiago, Svette Reina Merden S. ; Saavedra, Sheenly Anne ; Chou, Chih‐Lung ; Chiu, Kuan‐Cheng ; Shen, Ji‐LinAdvanced materials interfaces, 2023-01, Vol.10 (2), p.n/a [Periódico revisado por pares]Weinheim: John Wiley & Sons, IncTexto completo disponível |
6 |
Material Type: Ata de Congresso
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Photo assisted negative differential resistance in porous silicon: A potential nano-structure for hot carrier solar cellBiswas, Susmita ; Nandi, Anupam ; Basu, Shayari ; Chakrabarty, Sudipta ; Mukhopadhyay, Sumita ; Saha, Hiranmay ; Hossain, Syed MinhazMaterials today : proceedings, 2021, Vol.39, p.1930-1933 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
7 |
Material Type: Artigo
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Electric Field- and Current-Induced Electroforming Modes in NbO xNandi, Sanjoy Kumar ; Nath, Shimul Kanti ; El-Helou, Assaad E ; Li, Shuai ; Ratcliff, Thomas ; Uenuma, Mutsunori ; Raad, Peter E ; Elliman, Robert GACS applied materials & interfaces, 2020-02, Vol.12 (7), p.8422-8428 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
8 |
Material Type: Artigo
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Humidity induced resistive switching and negative differential resistance in α-Fe2O3 porous thin filmsMainali, Punya ; Wagle, Phadindra ; Khatri, Nishan ; McPherson, Chasen ; Kalkan, Kaan ; McIlroy, D.N.Sensors and actuators. A. Physical., 2023-11, Vol.362, p.114631, Article 114631 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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Rotating single molecule-based devices: Single-spin switching, negative differential electrical and thermoelectric resistanceYang, X.F. ; Dong, Y.J. ; Yu, H.L. ; Tao, X.X. ; Liu, Y.S.Chemical physics, 2024-01, Vol.577, p.112131, Article 112131 [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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Negative Differential Resistance in Negative Capacitance FETsZhou, Jiuren ; Han, Genquan ; Li, Jing ; Liu, Yan ; Peng, Yue ; Zhang, Jincheng ; Sun, Qing-Qing ; Zhang, David Wei ; Hao, YueIEEE electron device letters, 2018-04, Vol.39 (4), p.622-625 [Periódico revisado por pares]IEEETexto completo disponível |