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Material Type: Artigo
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Mathematical model of a frequency pressure transducer based on a resonant tunneling diodeOsadchuk, O.V. ; Osadchuk, V.S. ; Osadchuk, I.O.Fìzika ì hìmìâ tverdogo tìla (Online), 2022-05, Vol.23 (2), p.277-284 [Periódico revisado por pares]Vasyl Stefanyk Precarpathian National UniversityTexto completo disponível |
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Material Type: Artigo
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Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling DiodesCimbri, Davide ; Yavas-Aydin, Begum ; Hartmann, Fabian ; Jabeen, Fauzia ; Worschech, Lukas ; Hofling, Sven ; Wasige, EdwardIEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4638-4645 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Phonon-Assisted Tunneling Current in a Double-Barrier Heterostructure with a Quantum WellShchurova, Ljudmila Yu ; Murzin, Vladimir N.Journal of Russian laser research, 2021-11, Vol.42 (6), p.632-642 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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Material Type: Artigo
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Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriersNutku, F.Journal of computational electronics, 2014-06, Vol.13 (2), p.456-465 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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Material Type: Artigo
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InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriersLin, Yue-Min ; Lin, Kun-Ping ; Lee, Ting-Chi ; Li, Meng-Ying ; Lee, Chien-PingElectronics letters, 2014-07, Vol.50 (14), p.1018-1020 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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Material Type: Report
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Electron Transport in Heterojunction SuperlatticesTsui, D. C ; Shayegan, M1995Texto completo disponível |