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Review—Extremely Thin Amorphous Indium Oxide Transistors
Review—Extremely Thin Amorphous Indium Oxide Transistors
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Review—Extremely Thin Amorphous Indium Oxide Transistors

Charnas, Adam ; Zhang, Zhuocheng ; Lin, Zehao ; Zheng, Dongqi ; Zhang, Jie ; Si, Mengwei ; Ye, Peide D.

Advanced materials (Weinheim), 2024-03, Vol.36 (9), p.e2304044-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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2
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
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Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide

Kozhakhmetov, Azimkhan ; Schuler, Bruno ; Tan, Anne Marie Z. ; Cochrane, Katherine A. ; Nasr, Joseph R. ; El‐Sherif, Hesham ; Bansal, Anushka ; Vera, Alex ; Bojan, Vincent ; Redwing, Joan M. ; Bassim, Nabil ; Das, Saptarshi ; Hennig, Richard G. ; Weber‐Bargioni, Alexander ; Robinson, Joshua A.

Advanced materials (Weinheim), 2020-12, Vol.32 (50), p.e2005159-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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3
Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware
Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware
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Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware

Bégon‐Lours, Laura ; Halter, Mattia ; Puglisi, Francesco Maria ; Benatti, Lorenzo ; Falcone, Donato Francesco ; Popoff, Youri ; Dávila Pineda, Diana ; Sousa, Marilyne ; Offrein, Bert Jan

Advanced electronic materials, 2022-06, Vol.8 (6), p.n/a [Periódico revisado por pares]

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4
An ultra high-endurance memristor using back-end-of-line amorphous SiC
An ultra high-endurance memristor using back-end-of-line amorphous SiC
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An ultra high-endurance memristor using back-end-of-line amorphous SiC

Kapur, Omesh ; Guo, Dongkai ; Reynolds, Jamie ; Newbrook, Daniel ; Han, Yisong ; Beanland, Richard ; Jiang, Liudi ; de Groot, C. H. Kees ; Huang, Ruomeng

Scientific reports, 2024-06, Vol.14 (1), p.14008-10, Article 14008 [Periódico revisado por pares]

London: Nature Publishing Group

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5
Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
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Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

Kim, Taikyu ; Choi, Cheol Hee ; Hur, Jae Seok ; Ha, Daewon ; Kuh, Bong Jin ; Kim, Yongsung ; Cho, Min Hee ; Kim, Sangwook ; Jeong, Jae Kyeong

Advanced materials (Weinheim), 2023-10, Vol.35 (43), p.e2204663-e2204663 [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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6
BEOL Large-Scale Integration and Precise Programming of HfO } /AlO } Superlattice-Like Multilevel Memristors
BEOL Large-Scale Integration and Precise Programming of HfO } /AlO } Superlattice-Like Multilevel Memristors
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BEOL Large-Scale Integration and Precise Programming of HfO } /AlO } Superlattice-Like Multilevel Memristors

Huang, Menghua ; Jiang, Pinfeng ; Wang, Chengxu ; Wang, Meiqing ; Ma, Yinghao ; Gan, Zhouchao ; Yang, Yifan ; Miao, Xiangshui ; Wang, Xingsheng

IEEE transactions on electron devices, 2024-06, p.1-6 [Periódico revisado por pares]

IEEE

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7
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
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Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Lehninger, David ; Olivo, Ricardo ; Ali, Tarek ; Lederer, Maximilian ; Kämpfe, Thomas ; Mart, Clemens ; Biedermann, Kati ; Kühnel, Kati ; Roy, Lisa ; Kalkani, Mahsa ; Seidel, Konrad

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (8), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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8
Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates
Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates
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Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates

Bégon‐Lours, Laura ; Slesazeck, Stefan ; Falcone, Donato Francesco ; Havel, Viktor ; Hamming‐Green, Ruben ; Fernandez, Marina Martinez ; Morabito, Elisabetta ; Mikolajick, Thomas ; Offrein, Bert Jan

Advanced electronic materials, 2024-05, Vol.10 (5), p.n/a [Periódico revisado por pares]

Wiley-VCH

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9
Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
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Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing

Chou, Chun-Yi ; Chen, Hsing-Yang ; Jiang, Yu-Sen ; Lin, Hsin-Chih ; Chen, Miin-Jang

Acta materialia, 2022-04, Vol.228, p.117762, Article 117762 [Periódico revisado por pares]

Elsevier Ltd

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10
High-Q On-Chip Capacitors Featuring "Self-Inductance Cancellation" for RF and mm-Wave Applications
High-Q On-Chip Capacitors Featuring "Self-Inductance Cancellation" for RF and mm-Wave Applications
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High-Q On-Chip Capacitors Featuring "Self-Inductance Cancellation" for RF and mm-Wave Applications

Rahimi, Arian ; Somarajan, Pratheesh ; Yu, Qiang ; Mohammadi, Elham ; Garrett, Jeffrey ; Rami, Said ; Kolluru, Kalyan C.

IEEE microwave and wireless components letters, 2022-06, Vol.32 (6), p.668-671 [Periódico revisado por pares]

IEEE

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