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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Hanyu, Yuichiro ; Domen, Kay ; Nomura, Kenji ; Hiramatsu, Hidenori ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, Toshio

Applied physics letters, 2013-11, Vol.103 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film
Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film
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Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

Shimizu, Takao ; Katayama, Kiliha ; Kiguchi, Takanori ; Akama, Akihiro ; Konno, Toyohiko J. ; Funakubo, Hiroshi

Applied physics letters, 2015-07, Vol.107 (3) [Periódico revisado por pares]

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3
p -channel thin-film transistor using p -type oxide semiconductor, SnO
p -channel thin-film transistor using p -type oxide semiconductor, SnO
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p -channel thin-film transistor using p -type oxide semiconductor, SnO

Ogo, Yoichi ; Hiramatsu, Hidenori ; Nomura, Kenji ; Yanagi, Hiroshi ; Kamiya, Toshio ; Hirano, Masahiro ; Hosono, Hideo

Applied physics letters, 2008-07, Vol.93 (3), p.032113-032113-3 [Periódico revisado por pares]

American Institute of Physics

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4
Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
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Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Suzuki, Safumi ; Asada, Masahiro ; Teranishi, Atsushi ; Sugiyama, Hiroki ; Yokoyama, Haruki

Applied physics letters, 2010-12, Vol.97 (24) [Periódico revisado por pares]

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5
Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
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Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

Ide, Keisuke ; Kikuchi, Yutomo ; Nomura, Kenji ; Kimura, Mutsumi ; Kamiya, Toshio ; Hosono, Hideo

Applied physics letters, 2011-08, Vol.99 (9), p.093507-093507-3 [Periódico revisado por pares]

American Institute of Physics

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6
Structural heterogeneity induced plasticity in bulk metallic glasses: From well-relaxed fragile glass to metal-like behavior
Structural heterogeneity induced plasticity in bulk metallic glasses: From well-relaxed fragile glass to metal-like behavior
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Structural heterogeneity induced plasticity in bulk metallic glasses: From well-relaxed fragile glass to metal-like behavior

Li, Weidong ; Bei, H. ; Tong, Y. ; Dmowski, W. ; Gao, Y. F.

Appl. Phys. Lett, 2013-10, Vol.103 (17) [Periódico revisado por pares]

United States

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7
Composite structure and size effect of barium titanate nanoparticles
Composite structure and size effect of barium titanate nanoparticles
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Composite structure and size effect of barium titanate nanoparticles

Hoshina, Takuya ; Wada, Satoshi ; Kuroiwa, Yoshihiro ; Tsurumi, Takaaki

Applied physics letters, 2008-11, Vol.93 (19), p.192914-192914-3 [Periódico revisado por pares]

American Institute of Physics

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8
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
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Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Iwasaki, Tatsuya ; Itagaki, Naho ; Den, Tohru ; Kumomi, Hideya ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

Applied physics letters, 2007-06, Vol.90 (24), p.242114-242114-3 [Periódico revisado por pares]

American Institute of Physics

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9
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
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Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

Applied physics letters, 2011-08, Vol.99 (5), p.053505-053505-3 [Periódico revisado por pares]

American Institute of Physics

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10
Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes
Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes
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Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes

Fujisaki, Sumiko ; Ishiwara, Hiroshi ; Fujisaki, Yoshihisa

Applied physics letters, 2007-04, Vol.90 (16), p.162902-162902-3 [Periódico revisado por pares]

American Institute of Physics

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