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Preparation, crystal structure, and superconductive characteristics of new oxynitrides (Nb 1− x M x )(N 1− y O y ) where M=Mg, Si, and x≈ y
Preparation, crystal structure, and superconductive characteristics of new oxynitrides (Nb 1− x M x )(N 1− y O y ) where M=Mg, Si, and x≈ y
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Preparation, crystal structure, and superconductive characteristics of new oxynitrides (Nb 1− x M x )(N 1− y O y ) where M=Mg, Si, and x≈ y

Ohashi, Yoshio ; Motohashi, Teruki ; Masubuchi, Yuji ; Moriga, Toshihiro ; Murai, Keiichiro ; Kikkawa, Shinichi

Journal of solid state chemistry, 2011-08, Vol.184 (8), p.2061-2065 [Periódico revisado por pares]

Amsterdam: Elsevier Inc

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2
Relative free energies of Si surfaces
Relative free energies of Si surfaces
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Relative free energies of Si surfaces

Follstaedt, D. M.

Applied physics letters, 1993-03, Vol.62 (10), p.1116-1118 [Periódico revisado por pares]

United States

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3
On the thermodynamical driving force during ion mixing of the Co-Si system
On the thermodynamical driving force during ion mixing of the Co-Si system
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On the thermodynamical driving force during ion mixing of the Co-Si system

XIA, W ; HEWETT, C. A ; FERNANDES, M ; LAU, S. S ; POKER, D. B

J. Appl. Phys.; (United States), 1989-03, Vol.65 (6), p.2300-2306 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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4
The solid solubility and thermal behavior of metastable concentrations of As in Si
The solid solubility and thermal behavior of metastable concentrations of As in Si
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The solid solubility and thermal behavior of metastable concentrations of As in Si

Lietoila, A. ; Gibbons, J. F. ; Sigmon, T. W.

Appl. Phys. Lett.; (United States), 1980-05, Vol.36 (9), p.765-768 [Periódico revisado por pares]

United States

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5
Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon
Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon
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Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

Narayan, J. ; Holland, O. W. ; Appleton, B. R.

J. Vac. Sci. Technol., B; (United States), 1983-10, Vol.1 (4), p.871-887

New York, NY: American Institute of Physics

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6
Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]
Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]
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Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]

Minnucci, J.A.

United States 1978

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7
Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]
Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]
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Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]

Minnucci, J. A

Spire Corp., Bedford, MA (USA) 1978

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8
Ion mixing and surface modification in metal-semiconductor systems
Ion mixing and surface modification in metal-semiconductor systems
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Ion mixing and surface modification in metal-semiconductor systems

Lau, S. S. ; Mayer, J. W.

United States 1990

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