Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Impact of thickness on the structural properties of high tin content GeSn layersAubin, J. ; Hartmann, J.M. ; Gassenq, A. ; Milord, L. ; Pauc, N. ; Reboud, V. ; Calvo, V.Journal of crystal growth, 2017-09, Vol.473, p.20-27 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor depositionLi, Xin ; Zhao, Yu ; Wu, Qihua ; Teng, Yan ; Hao, Xiujun ; Huang, YongJournal of crystal growth, 2018-11, Vol.502, p.71-75 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealingNemoz, Maud ; Dagher, Roy ; Matta, Samuel ; Michon, Adrien ; Vennéguès, Philippe ; Brault, JulienJournal of crystal growth, 2017-03, Vol.461, p.10-15 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Polymer effects on crystallization at the amorphous atazanavir-water interfaceParker, Andrew S. ; Taylor, Lynne S. ; Beaudoin, Stephen P.Journal of crystal growth, 2021-10, Vol.571, p.126254, Article 126254 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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The effect of nanoindentation on crystal growth rate fluctuations investigated by in-situ atomic force microscopyPiskunova, Natalia N.Journal of crystal growth, 2021-12, Vol.575, p.126359, Article 126359 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Growth conditions and mechanisms for IrOx nano-platelet formation by reactive sputteringWilson, Adam A. ; Graziano, Milena B. ; Leff, Asher C. ; Hanrahan, Brendan ; Baker, David R. ; Rivas, Manuel ; Sánchez, Bradley ; Parker, T. ; Sunal, PaulJournal of crystal growth, 2022-01, Vol.577, p.126374, Article 126374 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPEBorovac, Damir ; Sun, Wei ; Song, Renbo ; Wierer, Jonathan J. ; Tansu, NelsonJournal of crystal growth, 2020-03, Vol.533, p.125469, Article 125469 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBEHentschel, R. ; Gärtner, J. ; Wachowiak, A. ; Großer, A. ; Mikolajick, T. ; Schmult, S.Journal of crystal growth, 2018-10, Vol.500, p.1-4 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boulesYamaguchi, Tomoki ; Ohtomo, Kohei ; Sato, Shunsuke ; Ohtani, Noboru ; Katsuno, Masakazu ; Fujimoto, Tatsuo ; Sato, Shinya ; Tsuge, Hiroshi ; Yano, TakayukiJournal of crystal growth, 2015-12, Vol.431, p.24-31 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substratesLee, Lok Yi ; Frentrup, Martin ; Vacek, Petr ; Massabuau, Fabien C.-P. ; Kappers, Menno J. ; Wallis, David J. ; Oliver, Rachel A.Journal of crystal growth, 2019-10, Vol.524, p.125167, Article 125167 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |