Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0‐3 magnetic nanocomposites via EPD: Current status for power component fabrication and future directionsMills, Sara C. ; Patterson, Eric A. ; Andrew, Jennifer S.Journal of the American Ceramic Society, 2024-03, Vol.107 (3), p.1859-1870 [Periódico revisado por pares]Columbus: Wiley Subscription Services, IncTexto completo disponível |
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2 |
Material Type: Artigo
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0.03- mu m gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f sub(T) and 2 S/mm extrinsic transconductanceXu, D ; Suemitsu, T ; Osaka, J ; Umeda, Y ; Yamane, Y ; Ishii, Y ; Ishii, T ; Tamamura, TIEEE electron device letters, 1999-01, Vol.20 (5), p.206-208 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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0.03 V Electrolysis Voltage Driven Hydrazine Assisted Hydrogen Generation on NiCo phosphide Nanowires Supported NiCoHydroxide NanosheetsLi, Mujie ; Zhang, Zhongyi ; Xiong, Hailang ; Wang, Linan ; Zhuang, Shuxian ; Argyle, Morris D. ; Tang, Yang ; Yang, Xiaojin ; Chen, Yongmei ; Wan, Pingyu ; Fan, MaohongChemElectroChem, 2020-07, Vol.7 (14), p.3089-3097 [Periódico revisado por pares]Weinheim: John Wiley & Sons, IncTexto completo disponível |
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4 |
Material Type: Artigo
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0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant (74.9 s)Li, Qingsong ; Xiao, Dingbang ; Zhou, Xin ; Xu, Yi ; Zhuo, Ming ; Hou, Zhanqiang ; He, Kaixuan ; Zhang, Yongmeng ; Wu, XuezhongMicrosystems & nanoengineering, 2018-11, Vol.4 (1), p.32-11, Article 32 [Periódico revisado por pares]England: Springer Nature B.VTexto completo disponível |
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5 |
Material Type: Artigo
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0.1 kmol/m3 NaClを含む酸性溶液中における銅の活性溶解のカオスと反応モデル板垣, 昌幸 ; 森, 孝志 ; 渡辺, 邦洋日本金属学会誌, 1997, Vol.61(11), pp.1220-1227 [Periódico revisado por pares]公益社団法人 日本金属学会Texto completo disponível |
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6 |
Material Type: Artigo
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0.1 micro m driven at 1.5VElectronic engineering times, 1999-02, p.22London: AspenCoreTexto completo disponível |
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7 |
Material Type: magazinearticle
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0.1-mm electrostatic microrelays switch at up to 100 GHzVollmer, AlfredElectronic design, 1997-12, Vol.45 (27), p.34Nashville: Endeavor Business MediaTexto completo disponível |
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8 |
Material Type: Artigo
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0.1-mu m p(+)-GaAs gate HJFET''s fabricated using two-stepdry-etching and selective MOMBE growth techniquesWada, S ; Furuhata, N ; Tokushima, M ; Fukaishi, M ; Hida, H ; Maeda, TIEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1183-1189 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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0.2-mu m fully-self-aligned Y-shaped gate HJFET''s with reducedgate-fringing capacitance fabricated using collimated sputtering andelectroless Au-platingWada, S ; Tokushima, M ; Fukaishi, M ; Matsuno, N ; Yano, H ; Hida, H ; Maeda, TIEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1656-1662 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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0.2-μm fully-self-aligned Y-shaped gate HJFET's with reduced gate-fringing capacitance fabricated using collimated sputtering and electroless Au-platingWada, S. ; Tokushima, M. ; Fukaishi, M. ; Matsuno, N. ; Yano, H. ; Hida, H. ; Maeda, T.IEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1656-1662, Article 1656 [Periódico revisado por pares]Texto completo disponível |