Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET processOh, G.-G ; Lee, Y.-W ; Lee, BElectronics letters, 2018-02, Vol.54 (4), p.213-215 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
2 |
Material Type: Artigo
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0.058 mm2 13 Gbit/s inductorless analogue equaliser with low-frequency equalisation compensating 15 dB channel lossBalachandran, Arya ; Chen, Yong ; Choi, Pilsoon ; Boon, Chirn ChyeElectronics letters, 2018-01, Vol.54 (2), p.72-74 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
3 |
Material Type: Artigo
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0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm outputKrishnamurthy, K ; Chow, J ; Rodwell, M J W ; Pullela, RElectronics letters, 2003-10, Vol.39 (22), p.1-1 [Periódico revisado por pares]Stevenage: John Wiley & Sons, IncSem texto completo |
4 |
Material Type: Artigo
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0.1–5 GHz wideband ΔΣ fractional-N frequency synthesiser for software-defined radio applicationZhang, Zhao ; Yang, Jincheng ; Liu, Liyuan ; Qi, Nan ; Feng, Peng ; Liu, Jian ; Wu, NanjianIET circuits, devices & systems, 2019-10, Vol.13 (7), p.1071-1077 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
5 |
Material Type: Artigo
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{0,1}-Brauer Configuration Algebras and Their Applications in Graph Energy TheoryAgudelo Muñetón, Natalia ; Cañadas, Agustín Moreno ; Espinosa, Pedro Fernando Fernández ; Gaviria, Isaías David MarínMathematics (Basel), 2021-12, Vol.9 (23), p.3042 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
6 |
Material Type: Artigo
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationVasjanov, Aleksandr ; Barzdenas, VaidotasElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
7 |
Material Type: Artigo
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0.1°C accuracy ICO temperature sensor with segmentation algorithmLi, Jing ; Zhou, Pengfei ; Hu, Yuanbin ; Wang, Zhaochi ; Wei, Yi ; Li, Chengze ; Wu, Kejun ; Ning, NingElectronics letters, 2018-05, Vol.54 (11), p.686-687 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
8 |
Material Type: Artigo
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A 0.0012 mm2 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOSAn, Eun-Ji ; Oh, Dong-RyeolElectronics (Basel), 2022-05, Vol.11 (11), p.1707 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
9 |
Material Type: Artigo
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A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOSAn, Eun-Ji ; Oh, Dong-RyeolElectronics (Basel), 2022-06, Vol.11 (11) [Periódico revisado por pares]MDPI AGTexto completo disponível |
10 |
Material Type: Artigo
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A 0.0016 mm² 0.64 nJ leakage-based CMOS temperature sensorItuero, Pablo ; López-Vallejo, Marisa ; López-Barrio, CarlosSensors (Basel, Switzerland), 2013-09, Vol.13 (9), p.12648-12662 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |