Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operationSaito, M ; Ono, M ; Fujimoto, R ; Tanimoto, H ; Ito, N ; Yoshitomi, T ; Ohguro, T ; Momose, H S ; Iwai, HIEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operationSaito, M. ; Ono, M. ; Fujimoto, R. ; Tanimoto, H. ; Ito, N. ; Yoshitomi, T. ; Ohguro, T. ; Momose, H.S. ; Iwai, H.IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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0.15-μm n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppressionAbiko, Hitoshi ; Ono, Atsuki ; Ueno, Ryuuichi ; Masuoka, Sadaaki ; Shishiguchi, Seiichi ; Nakajima, Ken ; Sakai, IsamiElectronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (11), p.28-35 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |
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4 |
Material Type: Artigo
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0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operationSaito, M. ; Ono, M. ; Fujimoto, R. ; Tanimoto, H. ; Ito, N. ; Yoshitomi, T. ; Ohguro, T. ; Momose, H.S. ; Iwai, H.IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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0.1%C-2%Si-5%Mn超微細フェライト+オーステナイト鋼の短時間組織形成と力学的特性に及ぼす二相域焼鈍前組織の影響安達, 節展 ; 鳥塚, 史郎 ; 足立, 大樹 ; 伊東, 篤志鉄と鋼, 2019, Vol.105(2), pp.197-206 [Periódico revisado por pares]一般社団法人 日本鉄鋼協会Texto completo disponível |
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6 |
Material Type: Artigo
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0.2C-1.5Si-1.2Mn鋼のTRIP効果におよぼすひずみ速度の影響土田, 紀之 ; 尾﨑, 渓香鉄と鋼, 2013, Vol.99(8), pp.524-531 [Periódico revisado por pares]一般社団法人 日本鉄鋼協会Texto completo disponível |
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7 |
Material Type: Artigo
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0.43 J, 10 Hz Fourth Harmonic Generation of Nd:YAG Laser Using Large Li2B4O7 CrystalsSuzuki, Yuji ; Ono, Shingo ; Murakami, Hidetoshi ; Kozeki, Toshimasa ; Ohtake, Hideyuki ; Sarukura, Nobuhiko ; Masada, Genta ; Shiraishi, Hiroyuki ; Sekine, IchiroJapanese Journal of Applied Physics, 2002-07, Vol.41 (Part 2, No. 7B), p.L823-L824 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMsKOTABE, Akira ; ITOH, Kiyoo ; TAKEMURA, RiichiroIEICE Transactions on Electronics, 2012/04/01, Vol.E95.C(4), pp.555-563 [Periódico revisado por pares]The Institute of Electronics, Information and Communication EngineersTexto completo disponível |
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9 |
Material Type: Artigo
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0.54 [mu]m resolution two-photon interference with dispersion cancellation for quantum optical coherence tomographyOkano, Masayuki ; Lim, Hwan Hong ; Okamoto, Ryo ; Nishizawa, Norihiko ; Kurimura, Sunao ; Takeuchi, ShigekiScientific reports, 2015-12, Vol.5, p.18042 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
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10 |
Material Type: Artigo
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0.54 μm resolution two-photon interference with dispersion cancellation for quantum optical coherence tomographyOkano, Masayuki ; Lim, Hwan Hong ; Okamoto, Ryo ; Nishizawa, Norihiko ; Kurimura, Sunao ; Takeuchi, ShigekiScientific reports, 2015-12, Vol.5 (1), p.18042-18042, Article 18042 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |