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Material Type: Artigo
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10T SRAM Using Half- V} Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL LeakageMaroof, Naeem ; Bai-Sun KongIEEE transactions on very large scale integration (VLSI) systems, 2017-04, Vol.25 (4), p.1193-1203 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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1974 Lake Arrowhead Workshop on structured programmingBrown, R. R.Computer (Long Beach, Calif.), 1974-10, Vol.7 (10), p.61-63 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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2005 EDOC: meeting the challenges of enterprise computingHung, P.C.K. ; van Sinderen, M.J.IT professional, 2005-11, Vol.7 (6), p.44-45 [Periódico revisado por pares]Washington: IEEETexto completo disponível |
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Material Type: magazinearticle
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2018 Embedded Systems Week (ESWEEK) in TorinoHa, Soonhoi ; Eles, PetruIEEE design and test, 2019-02, Vol.36 (1), p.68-69Piscataway: IEEE Computer SocietyTexto completo disponível |
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Material Type: Artigo
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21st-Century Data Miners Meet 19th-Century Electrical CablesRudin, C ; Passonneau, R J ; Radeva, A ; Ierome, S ; Isaac, D FComputer (Long Beach, Calif.), 2011-06, Vol.44 (6), p.103-105 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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25 Years of SoftwareErdogmus, HakanIEEE software, 2008-11, Vol.25 (6), p.2-5 [Periódico revisado por pares]Los Alamitos: IEEETexto completo disponível |
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Material Type: Artigo
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3-D-TCAD-Based Parasitic Capacitance Extraction for Emerging Multigate Devices and CircuitsBhoj, Ajay N. ; Joshi, Rajiv V. ; Jha, Niraj K.IEEE transactions on very large scale integration (VLSI) systems, 2013-11, Vol.21 (11), p.2094-2105 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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3-valued trace-based fault simulation of synchronous sequential circuitsSong, O.Y. ; Menon, P.R.IEEE transactions on computer-aided design of integrated circuits and systems, 1993-09, Vol.12 (9), p.1419-1424 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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A 0.13- \mu \text CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS ActuationAlameh, Abdul Hafiz ; Nabki, FredericIEEE transactions on very large scale integration (VLSI) systems, 2017-04, Vol.25 (4), p.1261-1270 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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A 0.4-mW, 4.7-ps Resolution Single-Loop TDC Using a Half-Delay Time IntegratorKwon, Chan-Keun ; Kim, Hoonki ; Park, Jongsun ; Kim, Soo-WonIEEE transactions on very large scale integration (VLSI) systems, 2016-03, Vol.24 (3), p.1184-1188 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |