Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Driven electron g-factor anisotropy in layered III–V semiconductors: Interfacing, tunnel coupling, and structure inversion asymmetry effectsToloza Sandoval, M. A. ; Leon Padilla, J. E. ; Wanderley, A. B. ; Sipahi, G. M. ; Diniz Chubaci, J. F. ; Ferreira da Silva, A.Journal of applied physics, 2024-03, Vol.135 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
2 |
Material Type: Artigo
|
Graphene spintronics: Spin injection and proximity effects from first principlesLazić, P. ; Sipahi, G. M. ; Kawakami, R. K. ; Žutić, IgorPhysical review. B, Condensed matter and materials physics, 2014-08, Vol.90 (8), Article 085429 [Periódico revisado por pares]Texto completo disponível |
|
3 |
Material Type: Artigo
|
Electrical tuning of helical edge states in topological multilayersCampos, T ; Toloza Sandoval, M A ; Diago-Cisneros, L ; Sipahi, G MJournal of physics. Condensed matter, 2019-12, Vol.31 (49), p.495501-495501 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
|
4 |
Material Type: Artigo
|
Band structure calculations of InP wurtzite/zinc-blende quantum wellsFaria Junior, P. E. ; Sipahi, G. M.Journal of applied physics, 2012-11, Vol.112 (10) [Periódico revisado por pares]Texto completo disponível |
|
5 |
Material Type: Artigo
|
Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)AsTesařová, N. ; Ostatnický, T. ; Novák, V. ; Olejník, K. ; Šubrt, J. ; Reichlová, H. ; Ellis, C. T. ; Mukherjee, A. ; Lee, J. ; Sipahi, G. M. ; Sinova, J. ; Hamrle, J. ; Jungwirth, T. ; Němec, P. ; Černe, J. ; Výborný, K.Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (8), Article 085203 [Periódico revisado por pares]Texto completo disponível |
|
6 |
Material Type: Artigo
|
Spin-polarized transport in II–VI diluted magnetic semiconductors superlatticesGomes, J.L. ; Rodrigues, S.C.P. ; Sipahi, G.M. ; Scolfaro, L. ; da Silva, E.F.Materials science & engineering. B, Solid-state materials for advanced technology, 2012-07, Vol.177 (12), p.962-966 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
|
7 |
Material Type: Artigo
|
Luminescence studies on nitride quaternary alloys double quantum wellsRodrigues, S.C.P. ; dos Santos, O.F.P. ; Scolfaro, L.M.R. ; Sipahi, G.M. ; da Silva, E.F.Applied surface science, 2008-09, Vol.254 (23), p.7790-7793 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
8 |
Material Type: Artigo
|
The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductorRodrigues, S.C.P. ; Araújo, Y.R.V. ; Sipahi, G.M. ; Scolfaro, L.M.R. ; da Silva, E.F.Applied surface science, 2008-11, Vol.255 (3), p.709-711 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
9 |
Material Type: Artigo
|
Calculations of optical properties in p-doped nitrides quaternary alloys multiple quantum wellsRodrigues, S.C.P. ; d'Eurydice, M.N. ; Sipahi, G.M. ; da Silva, E.F.Thin solid films, 2006-10, Vol.515 (2), p.782-785 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
|
10 |
Material Type: Artigo
|
Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructuresRodrigues, S C P ; Sipahi, G M ; Scolfaro, L M R ; Leite, J RJournal of physics. Condensed matter, 2002-06, Vol.14 (23), p.5813-5827, Article 312 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |