Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technologyRen, F. ; Pearton, S.J. ; Abernathy, C.R. ; Wu, C.S. ; Hu, M. ; Pao, C.-K. ; Wang, D.C. ; Wen, C.P.IEEE transactions on electron devices, 1992-12, Vol.39 (12), p.2701-2706 [Periódico revisado por pares]NEW YORK: IEEETexto completo disponível |
2 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
3 |
Material Type: Artigo
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0.5% enantiomeric excess bupivacaine (S75-R25), 0.5% racemic bupivacaine, and 2%lidocaine for facial nerve block by the O'Brien technique: a comparative study.Cangiani, Luis Henrique ; Cangiani, Luiz Marciano ; Pereira, Antônio Márcio de Safim ArantesRevista brasileira de anestesiologia, 2007-04, Vol.57 (2), p.136-146 [Periódico revisado por pares]BrazilTexto completo disponível |
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Material Type: Artigo
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0.5 m Triboelectric Nanogenerator for Efficient Blue Energy Harvesting of All‐Sea AreasFeng, Junrui ; Zhou, Hanlin ; Cao, Zhi ; Zhang, Enyang ; Xu, Shuxing ; Li, Wangtao ; Yao, Huilu ; Wan, Linyu ; Liu, GuanlinAdvanced science, 2022-12, Vol.9 (35), p.e2204407-n/a [Periódico revisado por pares]Germany: John Wiley & Sons, IncTexto completo disponível |
5 |
Material Type: Artigo
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0.6-V- V IN 7.0-nA- I Q 0.75-mA- I L CMOS Capacitor-Less LDO for Low-Voltage Micro-Energy-Harvested SuppliesPereira-Rial, Oscar ; Lopez, Paula ; Carrillo, Juan M.IEEE transactions on circuits and systems. I, Regular papers, 2022-02, Vol.69 (2), p.599-608 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
6 |
Material Type: Artigo
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0.6-V-VIN 7.0-nA-IQ 0.75-mA-IL CMOS Capacitor-Less LDO for Low-Voltage Micro-Energy-Harvested SuppliesPereira-Rial, Oscar ; Lopez, Paula ; Carrillo, Juan M.IEEE transactions on circuits and systems. I, Regular papers, 2022-02, Vol.69 (2), p.599-608 [Periódico revisado por pares]IEEETexto completo disponível |
7 |
Material Type: Artigo
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A 0.000747 %/V, 64.59 dB PSRR CMOS-only voltage reference for ultra-low power WSN applicationsDong, Siwan ; Li, Jiaqi ; Bu, Sen ; Liu, Changxiang ; Tong, XingyuanInternational journal of electronics and communications, 2022-12, Vol.157, p.154420, Article 154420 [Periódico revisado por pares]Elsevier GmbHTexto completo disponível |
8 |
Material Type: Artigo
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A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias techniqueGupta, Manishankar Prasad ; Kumar, Sandeep ; Elizabeth Caroline, B. ; Song, Hanjung ; Kumar, Vijay ; Gorre, PradeepInternational journal of electronics and communications, 2023-08, Vol.168, p.154742, Article 154742 [Periódico revisado por pares]Elsevier GmbHTexto completo disponível |
9 |
Material Type: Artigo
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A 0.2-V 10-Bit 5-kHz SAR ADC With Dynamic Bulk Biasing and Ultra-Low-Supply-Voltage ComparatorPetrie, Alexander ; Song, Yixin ; Kinnison, Whitney ; Qu, Yong ; Layton, Kent ; Chiang, Shiuh-Hua WoodIEEE transactions on circuits and systems. I, Regular papers, 2023-07, Vol.70 (7), p.1-12 [Periódico revisado por pares]New York: IEEETexto completo disponível |
10 |
Material Type: Artigo
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A 0.37mm2 Fully-Integrated Wide Dynamic Range Sub-GHz Receiver Front-End without Off-Chip Matching ComponentsZHANG, Yuncheng ; LIU, Bangan ; SOMEYA, Teruki ; WU, Rui ; QIU, Junjun ; SHIRANE, Atsushi ; OKADA, KenichiIEICE Transactions on Electronics, 2022/07/01, Vol.E105.C(7), pp.334-342 [Periódico revisado por pares]The Institute of Electronics, Information and Communication EngineersTexto completo disponível |