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1 |
Material Type: Artigo
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0-1 Piecewise linearization approach for interval-parameter nonlinear programming: application to environmental management under uncertaintyLI, Y. P ; HUANG, G. H ; YANG, Z. F ; NIE, S. LCanadian journal of civil engineering, 2009-06, Vol.36 (6), p.1071-1084 [Periódico revisado por pares]Ottawa, ON: National Research Council of CanadaTexto completo disponível |
2 |
Material Type: Artigo
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0.18-μm CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuationTanabe, A ; Umetani, M ; Fujiwara, I ; Ogura, T ; Kataoka, K ; Okihara, M ; Sakuraba, H ; Endoh, T ; Masuoka, FIEEE journal of solid-state circuits, 2001-06, Vol.36 (6), p.988-996 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
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0.5 V, 254 μW Second-Order Tunable Biquad Low-Pass Filter with 7.3 fJ FOM Using a Novel Low-Voltage Fully Balanced Current-Mode CircuitVeerendranath, P. S. ; Sharma, Vivek ; Vasantha, M. H. ; Nithin Kumar, Y. B.Circuits, systems, and signal processing, 2021-05, Vol.40 (5), p.2114-2134 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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Material Type: Artigo
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A 0.05 m Change in Inertial Measurement Unit Placement Alters Time and Frequency Domain Metrics during RunningKiernan, Dovin ; Katzman, Zachary David ; Hawkins, David A ; Christiansen, Blaine AndrewSensors (Basel, Switzerland), 2024-01, Vol.24 (2), p.656 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
5 |
Material Type: Artigo
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A 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing filmMadhaiyan, Govindasamy ; Chen, Chao-Hsuan ; Wu, Yi-Chu ; Horng, Sheng-Fu ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Lin, Hong-CheuJournal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (21), p.644-6447 [Periódico revisado por pares]Cambridge: Royal Society of ChemistryTexto completo disponível |
6 |
Material Type: Artigo
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A 0.13-μm Zero-IF CMOS RF Receiver for LTE-Advanced SystemsYoungho Seo ; Thanhson Lai ; Changwan KimJournal of Electromagnetic Engineering and Science, 2014, 14(2), , pp.61-67 [Periódico revisado por pares]한국전자파학회JEESTexto completo disponível |
7 |
Material Type: Artigo
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A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement SystemPérez-Bailón, Jorge ; Márquez, Alejandro ; Calvo, Belén ; Medrano, NicolásSensors (Basel, Switzerland), 2018-05, Vol.18 (5), p.1405 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
8 |
Material Type: Artigo
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A 0.18 μm p-MOSFET large-signal RF model and its application on MMIC designHo, Chien-Chih ; Kuo, Chin-Wei ; Hsiao, Chao-Chih ; Chan, Yi-JenSolid-state electronics, 2003-06, Vol.47 (6), p.1117-1122 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
9 |
Material Type: Artigo
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A 0.18 μm Stability-Enhanced CMOS LDO with Robust Compensation SchemePAN, Hsuan-I ; CHEN, Chern-LinIEICE transactions on electronics, 2009-08, Vol.92 (8), p.1080-1086 [Periódico revisado por pares]Oxford: Oxford University PressTexto completo disponível |
10 |
Material Type: Artigo
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A 0.190-pJ/bit 25.2-Gb/s/wire Inverter-Based AC-Coupled Transceiver for Short-Reach Die-to-Die Interfaces in 5-nm CMOSNishi, Yoshinori ; Poulton, John W. ; Turner, Walker J. ; Chen, Xi ; Song, Sanquan ; Zimmer, Brian ; Tell, Stephen G. ; Nedovic, Nikola ; Wilson, John M. ; Dally, William J. ; Gray, C. ThomasIEEE journal of solid-state circuits, 2024-04, Vol.59 (4), p.1146-1157 [Periódico revisado por pares]IEEETexto completo disponível |