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1 |
Material Type: Artigo
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0-homogeneous effect algebrasJenča, GejzaSoft computing (Berlin, Germany), 2010-08, Vol.14 (10), p.1111-1116 [Periódico revisado por pares]Berlin/Heidelberg: Springer-VerlagTexto completo disponível |
2 |
Material Type: Artigo
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(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire SubstratesBick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L.Journal of electronic materials, 2015-08, Vol.44 (8), p.2930-2938 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
3 |
Material Type: Artigo
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thicknessLaifi, J. ; Bchetnia, A.Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
4 |
Material Type: Artigo
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[001] HRTEM Image of Iron Nanoparticles Reveals 3-nm-Thick Passive LayerSosa, Siari S.MRS bulletin, 2001-01, Vol.26 (1), p.9-10 [Periódico revisado por pares]New York, USA: Cambridge University PressTexto completo disponível |
5 |
Material Type: Artigo
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(001) textured PbTiO3 thin films grown on redoping n-Si by metalorganic chemical vapor deposition under reduced pressureSUN, L ; CHEN, Y.-F ; YU, T ; MING, N.-B ; DING, D.-S ; LU, Z.-HApplied physics. A, Materials science & processing, 1996-10, Vol.63 (4), p.381-384 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
6 |
Material Type: Artigo
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0.22 THz two-stage cascaded staggered double-vane traveling-wave tubeDeng, Guangsheng ; Chen, Ping ; Yang, Jun ; Yin, Zhiping ; Ruan, JiufuJournal of computational electronics, 2016-06, Vol.15 (2), p.634-638 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
7 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
8 |
Material Type: Artigo
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0.35 μm CMOS–MEMS low-mechanical-noise micro accelerometerChen, Ja-Hao ; Huang, Chih-WeiMicrosystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.299-304 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
9 |
Material Type: Artigo
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0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La DopingDinh, Thi Hinh ; Han, Hyoung-Su ; Tran, Vu Diem Ngoc ; Le Van, Vinh ; Hung, Nguyen Ba ; Lee, Jae-ShinJournal of electronic materials, 2020-10, Vol.49 (10), p.6080-6086 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
10 |
Material Type: Artigo
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0.7 and 3 T MRI and Sap Flow in Intact Trees: Xylem and Phloem in ActionHoman, N. M. ; Windt, C. W. ; Vergeldt, F. J. ; Gerkema, E. ; Van As, H.Applied magnetic resonance, 2007-08, Vol.32 (1-2), p.157-170 [Periódico revisado por pares]Heidelberg: Springer Nature B.VTexto completo disponível |