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ANTE: Abstracts in New Technology & Engineering
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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0-3 and 1-3 piezocomposites based on single crystal PMN-PT for transducer applicationsLevassort, F ; Hladky-Hennion, A C ; Le Khanh, H ; Tran-Huu-Hue, P ; Lethiecq, M ; Pham Thi, MAdvances in applied ceramics, 2010-03, Vol.109 (3), p.162-168 [Periódico revisado por pares]London, England: Taylor & FrancisTexto completo disponível |
| 2 |
Material Type: Artigo
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0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric EnvironmentsCecchetto, Matteo ; Alia, Ruben Garcia ; Wrobel, Frederic ; Coronetti, Andrea ; Bilko, Kacper ; Lucsanyi, David ; Fiore, Salvatore ; Bazzano, Giulia ; Pirovano, Elisa ; Nolte, RalfIEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.873-883 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 3 |
Material Type: Artigo
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0.1-6.0GHz Gain BlocksWireless Design & Development, 2004-04, Vol.12 (4), p.80Rockaway: Advantage Business MediaTexto completo disponível |
| 4 |
Material Type: Artigo
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0.18-μm CMOS push-pull power amplifier with antenna in IC packageWei Wang ; Zhang, Y.P.IEEE microwave and wireless components letters, 2004-01, Vol.14 (1), p.13-15New York, NY: IEEETexto completo disponível |
| 5 |
Material Type: Artigo
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0.18-μm Nondestructive readout FeRAM using charge compensation techniqueKATO, Yoshihisa ; YAMADA, Takayoshi ; SHIMADA, YasuhiroIEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2616-2621 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 6 |
Material Type: Artigo
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0.18µm Process PlatformWireless Design & Development, 2005-10, Vol.13 (10), p.38Rockaway: Advantage Business MediaTexto completo disponível |
| 7 |
Material Type: Artigo
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0.2-μm gate-length InGaP-InGaAs DCFETs for c-band MMIC amplifier applicationsChiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chan, Yi-JenIEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603 [Periódico revisado por pares]Texto completo disponível |
| 8 |
Material Type: Artigo
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0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100Kashio, N ; Kurishima, K ; Ida, M ; Matsuzaki, HElectronics letters, 2014-10, Vol.50 (22), p.1631-1633 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
| 9 |
Material Type: Artigo
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0.25 μm Self-Aligned AlGaN/GaN High Electron Mobility TransistorsKUMAR, Vipan ; KIM, D. H ; BASU, A ; ADESIDA, IIEEE electron device letters, 2008, Vol.29 (1), p.18-20 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
| 10 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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