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Refinado por: assunto: Memory remover assunto: Science & Technology remover assunto: Technology remover
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A Fully-Integrated Memristor Chip for Edge Learning
A Fully-Integrated Memristor Chip for Edge Learning
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A Fully-Integrated Memristor Chip for Edge Learning

Zhang, Yanhong ; Chu, Liang ; Li, Wenjun

Nano-Micro Letters, 2024-12, Vol.16 (1), p.166-166, Article 166 [Periódico revisado por pares]

Singapore: Springer Nature Singapore

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2
Observation of Omnidirectional Exchange Bias at All-Antiferromagnetic Polycrystalline Heterointerface
Observation of Omnidirectional Exchange Bias at All-Antiferromagnetic Polycrystalline Heterointerface
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Observation of Omnidirectional Exchange Bias at All-Antiferromagnetic Polycrystalline Heterointerface

Asakura, Mihiro ; Higo, Tomoya ; Matsuo, Takumi ; Uesugi, Ryota ; Nishio-Hamane, Daisuke ; Nakatsuji, Satoru

Advanced materials (Weinheim), 2024-07, Vol.36 (27), p.e2400301 [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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3
Strain- and Temperature-Modulated Growth of Mn3Ga Films
Strain- and Temperature-Modulated Growth of Mn3Ga Films
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Strain- and Temperature-Modulated Growth of Mn3Ga Films

Lin, Dennis J. X. ; Lim, B. C. ; Hnin, Yu Yu Ko ; Lim, Nelson C. B. ; Lee, Henry Y. L. ; Tan, Hang Khume ; Lim, Royston J. J. ; Chen, Shaohai ; Ho, Pin

Journal of electronic materials, 2024-07, Vol.53 (7), p.3503-3509 [Periódico revisado por pares]

New York: Springer US

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4
Formation-free resistive switching in nanocrystalline tellurium oxide
Formation-free resistive switching in nanocrystalline tellurium oxide
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Formation-free resistive switching in nanocrystalline tellurium oxide

Keerthana ; Venimadhav, Adyam

Nanotechnology, 2024-06, Vol.35 (26), p.265203 [Periódico revisado por pares]

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5
Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices
Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices
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Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Qin, Haiming ; He, Nan ; Han, Cong ; Zhang, Miaocheng ; Wang, Yu ; Hu, Rui ; Wu, Jiawen ; Shao, Weijing ; Saadi, Mohamed ; Zhang, Hao ; Hu, Youde ; Liu, Yi ; Wang, Xinpeng ; Tong, Yi

Nanomaterials (Basel, Switzerland), 2024-06, Vol.14 (11), p.986 [Periódico revisado por pares]

Basel: MDPI AG

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6
Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP
Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP
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Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

Zheng, Shunshun ; Zhang, Zhangang ; Ye, Jiefeng ; Lu, Xiaojie ; Lei, Zhifeng ; Liu, Zhili ; Geng, Gaoying ; Zhang, Qi ; Zhang, Hong ; Li, Hui

Electronics (Basel), 2024-06, Vol.13 (11), p.2012 [Periódico revisado por pares]

Basel: MDPI AG

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7
Brain–Computer Interface Based on PLV-Spatial Filter and LSTM Classification for Intuitive Control of Avatars
Brain–Computer Interface Based on PLV-Spatial Filter and LSTM Classification for Intuitive Control of Avatars
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Brain–Computer Interface Based on PLV-Spatial Filter and LSTM Classification for Intuitive Control of Avatars

Martín-Chinea, Kevin ; Gómez-González, José Francisco ; Acosta, Leopoldo

Electronics (Basel), 2024-06, Vol.13 (11), p.2088 [Periódico revisado por pares]

Basel: MDPI AG

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8
Implications for Serious Game Design: Quantification of Cognitive Stimulation in Virtual Reality Puzzle Games through MSC and SpEn EEG Analysis
Implications for Serious Game Design: Quantification of Cognitive Stimulation in Virtual Reality Puzzle Games through MSC and SpEn EEG Analysis
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Implications for Serious Game Design: Quantification of Cognitive Stimulation in Virtual Reality Puzzle Games through MSC and SpEn EEG Analysis

GomezRomero-Borquez, Jesus ; Del-Valle-Soto, Carolina ; Del-Puerto-Flores, José A ; Castillo-Soria, Francisco R ; Maciel-Barboza, F. M

Electronics (Basel), 2024-06, Vol.13 (11), p.2017 [Periódico revisado por pares]

Basel: MDPI AG

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9
A Novel CNFET SRAM-Based Compute-In-Memory for BNN Considering Chirality and Nanotubes
A Novel CNFET SRAM-Based Compute-In-Memory for BNN Considering Chirality and Nanotubes
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A Novel CNFET SRAM-Based Compute-In-Memory for BNN Considering Chirality and Nanotubes

Kim, Youngbae ; Alnatsheh, Nader ; Yadav, Nandakishor ; Cho, Jaeik ; Jo, Heeyoung ; Choi, Kyuwon Ken

Electronics (Basel), 2024-06, Vol.13 (11), p.2192 [Periódico revisado por pares]

Basel: MDPI AG

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10
Dual-terminal artificial synapse in two-dimensional CrSBr memristor for neuromorphic computing
Dual-terminal artificial synapse in two-dimensional CrSBr memristor for neuromorphic computing
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Dual-terminal artificial synapse in two-dimensional CrSBr memristor for neuromorphic computing

Li, Zhi ; Liu, Ruiqi ; Chu, Yafei ; Feng, Sihua ; Lan, Weican ; Duan, Hengli ; Liu, Chaocheng ; Yan, Wensheng

Journal of materials science. Materials in electronics, 2024-06, Vol.35 (16), p.1091, Article 1091 [Periódico revisado por pares]

New York: Springer US

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