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1
Tunnel-FET evolution and applications for analog circuits
Tunnel-FET evolution and applications for analog circuits
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Tunnel-FET evolution and applications for analog circuits

Paula Ghedini Der Agopian João Antonio Martino 1959-; Eddy Simoen; Rita Rooyackers; Cor Claeys

Journal of Integrated Circuits and Systems Porto Alegre v. 17, n. 2, p. 1-7, Oct. 2022

Porto Alegre 2022

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2
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
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Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Paula Ghedini Der Agopian; Rita Rooyackers; Eddy Simoen; João Antonio Martino 1959-

Semiconductor Science and Technology v. 33, n. 7, p. 075012, 2018

2018

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3
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
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Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

Luís Felipe Vicentis Caparroz Paula Ghedini Der Agopian; Cor Claeys; Eddy Simoen; Caio Cesar Mendes Bordallo; João Antonio Martino 1959-

Semiconductor Science and Technology v. 33, n. 6, p. 065003, 2018

2018

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4
The impact of the temperature on In0.53Ga0.47As nTFETs
The impact of the temperature on In0.53Ga0.47As nTFETs
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The impact of the temperature on In0.53Ga0.47As nTFETs

Caio Cesar Mendes Bordallo Dan Mocuta; Nadine Collaert; A Alian; Eddy Simoen; Cor Claeys; Paula Ghedini Der Agopian; João Antonio Martino 1959-; Rita Rooyackers; Yannick Mols; A Van Dooren; Anne S Verhulst; D Lin

v.18, n. 1,2018 Composants nanoélectroniques

2018

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5
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies
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Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies

Vitor Tatsuo Itocazu Victor Sonnenberg; João Antonio Martino 1959-; Eddy Simoen; Cor Claeys

Journal of Integrated Circuits and Systems v. 12, n. 2, p. 82-88, 2017

2017

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6
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
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Study of line-TFET analog performance comparing with other TFET and MOSFET architectures

Paula Ghedini Der Agopian Eddy Simoen; Anne Vandooren; Rita Rooyackers; Aaron Thean; Cor Claeys; João Antonio Martino 1959-; EUROSOI-ULIS 2016

Solid-State Electronics Volume 128, February 2017, Pages 43-47 v. 128, p. 43-47, Fev 2017

2017

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7
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
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Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Rita Rooyackers; Eddy Simoen; Paula Ghedini Der Agopian; A Vandooren; João Antonio Martino 1959-

Semiconductor Science and Technology v. 32, n.5, p. 055015, 2017

2017

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8
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs
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The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs

Caio Cesar Mendes Bordallo Nadine Collaert; Cor Claeys; Eddy Simoen; A Vandooren; Rita Rooyackers; Yannick Mols; A Alian; Paula Ghedini Der Agopian; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 64, n. 9, p. p. 3595-3600, Sept. 2017

2017

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9
Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs
Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs
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Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs

Alberto Vinicius de Oliveira Eddy Simoen; Aaron Thean; Paula Ghedini Der Agopian; João Antonio Martino 1959-; Cor Claeys; Hans Mertens; Nadine Collaert

ECS Transactions volume 66 issue 5 on pages 309 to 314 v. 66, n. 5, p. 309-314

2016

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10
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
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Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

Alberto Vinicius de Oliveira Paula Ghedini Der Agopian; Eddy Simoen; Robert Langer; Nadine Collaert; Aaron Thean; Cor Claeys; João Antonio Martino 1959-

Semiconductor Science and Technology v. 31, n. 11, p. 114002 , 2016

2016

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