skip to main content
Idioma:
Mostrar Somente
Refinado por: assunto: Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties remover assunto: Materials Science remover Exact Sciences And Technology remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
AgI nanostructure development in sputter-disordered and Al-doped Ag films probed by XRD, SEM, optical absorption and photoluminescence
AgI nanostructure development in sputter-disordered and Al-doped Ag films probed by XRD, SEM, optical absorption and photoluminescence
Material Type:
Artigo 		Adicionar ao Meu Espaço

AgI nanostructure development in sputter-disordered and Al-doped Ag films probed by XRD, SEM, optical absorption and photoluminescence

MOHAN, D. B ; REDDY, V. S ; SUNANDANA, C. S

Applied physics. A, Materials science & processing, 2007-01, Vol.86 (1), p.73-82 [Periódico revisado por pares]

Berlin: Springer

Texto completo disponível

Citações Citado por
2
Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires
Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires
Material Type:
Artigo 		Adicionar ao Meu Espaço

Anisotropic size quantization and semimetal–semiconductor phase transition in bismuth-like cylindrical nanowires

Bejenari, I M ; Kantser, V G ; Myronov, M ; Mironov, O A ; Leadley, D R

Semiconductor science and technology, 2004-01, Vol.19 (1), p.106-112 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível

Citações Citado por
3
Cold spray deposition characteristics of mechanically alloyed Cu-CNT composite powders
Cold spray deposition characteristics of mechanically alloyed Cu-CNT composite powders
Material Type:
Artigo 		Adicionar ao Meu Espaço

Cold spray deposition characteristics of mechanically alloyed Cu-CNT composite powders

Pialago, Edward Joshua T. ; Park, Chan Woo

Applied surface science, 2014-07, Vol.308, p.63-74 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

Texto completo disponível

Citações Citado por
4
Comparison of reactivity on step and terrace sites of Pd (3 3 2) surface for the dissociative adsorption of hydrogen: A quantum chemical molecular dynamics study
Comparison of reactivity on step and terrace sites of Pd (3 3 2) surface for the dissociative adsorption of hydrogen: A quantum chemical molecular dynamics study
Material Type:
Artigo 		Adicionar ao Meu Espaço

Comparison of reactivity on step and terrace sites of Pd (3 3 2) surface for the dissociative adsorption of hydrogen: A quantum chemical molecular dynamics study

Ahmed, Farouq ; Nagumo, Ryo ; Miura, Ryuji ; Ai, Suzuki ; Tsuboi, Hideyuki ; Hatakeyama, Nozomu ; Endou, Akira ; Takaba, Hiromitsu ; Kubo, Momoji ; Miyamoto, Akira

Applied surface science, 2011-10, Vol.257 (24), p.10503-10513 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

Texto completo disponível

Citações Citado por
5
Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal
Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal
Material Type:
Artigo 		Adicionar ao Meu Espaço

Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal

Koh, Eui Kwan ; Park, Il-Woo ; Choi, H. ; Yoon, M. ; Ho Choh, Sung ; Sung Kim, Hang ; Min Cho, Yong ; Kim, Sangsig ; Soo Park, Sung

Journal of crystal growth, 2005-03, Vol.276 (1), p.37-42 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

Texto completo disponível

Citações Citado por
6
Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique
Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique

Lin, Yow-Jon ; Chu, Yow-Lin

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1172-1175 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível

Citações Citado por
7
Electron-phonon interaction effects in semiconductor quantum dots: A nonperturabative approach
Electron-phonon interaction effects in semiconductor quantum dots: A nonperturabative approach
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electron-phonon interaction effects in semiconductor quantum dots: A nonperturabative approach

VASILEVSKIY, M. I ; ANDA, E. V ; MAKLER, S. S

Physical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (3), p.035318.1-035318.14, Article 035318 [Periódico revisado por pares]

Ridge, NY: American Physical Society

Texto completo disponível

Citações Citado por
8
Electron states in a two-dimensional ring - an exactly soluble model
Electron states in a two-dimensional ring - an exactly soluble model
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electron states in a two-dimensional ring - an exactly soluble model

Tan, W-C ; Inkson, J C

Semiconductor science and technology, 1996-11, Vol.11 (11), p.1635-1641 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível

Citações Citado por
9
Electron―LO-phonon interaction in semiconductor double heterostructures
Electron―LO-phonon interaction in semiconductor double heterostructures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electron―LO-phonon interaction in semiconductor double heterostructures

GINER, C. T ; COMAS, F

Physical review. B, Condensed matter, 1988-03, Vol.37 (9), p.4583-4588

Woodbury, NY: American Physical Society

Texto completo disponível

Citações Citado por
10
Enhanced probabilities of phonon-assisted optical transitions in semiconductor quantum dots
Enhanced probabilities of phonon-assisted optical transitions in semiconductor quantum dots
Material Type:
Artigo 		Adicionar ao Meu Espaço

Enhanced probabilities of phonon-assisted optical transitions in semiconductor quantum dots

Devreese, J T ; Fomin, V M ; Gladilin, V N ; Pokatilov, E P ; Klimin, S N

Nanotechnology, 2002-04, Vol.13 (2), p.163-168 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Revistas revisadas por pares (39)

Data de Publicação 

De até
Refinar
  1. Antes de1989  (6)
  2. 1989Até2001  (4)
  3. 2002Até2005  (18)
  4. 2006Até2011  (10)
  5. Após 2011  (6)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.