Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0-1 GHZ WAVE-GUIDE 10.6 MU M GAAS ELECTROOPTIC MODULATORBROWN, RTIEEE journal of quantum electronics, 1992-05, Vol.28 (5), p.1349-1352 [Periódico revisado por pares]NEW YORK: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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0.015 Degree-Per-Hour Honeycomb Disk Resonator GyroscopeXu, Yi ; Li, Qingsong ; Wang, Peng ; Zhang, Yongmeng ; Zhou, Xin ; Yu, Lei ; Wu, Xuezhong ; Xiao, DingbangIEEE sensors journal, 2021-03, Vol.21 (6), p.7326-7338 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation MonitoringLee, Jaehyuk ; Ha, Unsoo ; Yoo, Hoi-JunJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926대한전자공학회Texto completo disponível |
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4 |
Material Type: Artigo
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0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laserIshida, O. ; Toba, H. ; Tohmori, Y.IEEE photonics technology letters, 1989-12, Vol.1 (12), p.452-454IEEETexto completo disponível |
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5 |
Material Type: Artigo
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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layersNihei, M. ; Hara, N. ; Suehiro, H. ; Kuroda, S.Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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6 |
Material Type: Artigo
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0.1 dB/cm waveguide losses in single-mode SOI rib waveguidesFischer, U. ; Zinke, T. ; Kropp, J.-R. ; Arndt, F. ; Petermann, K.IEEE photonics technology letters, 1996-05, Vol.8 (5), p.647-648IEEETexto completo disponível |
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7 |
Material Type: Artigo
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMochiji, K ; Ogawa, T ; Oizumil, H ; Soga, TMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layerOmura, Y. ; Nakashima, S. ; Izumi, K. ; Ishii, T.IEEE transactions on electron devices, 1993-05, Vol.40 (5), p.1019-1022 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiverHan, Jung-Hee ; Ko, Joon-Won ; Lee, Jae Seung ; Shin, Sang-YungIEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503IEEETexto completo disponível |
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10 |
Material Type: Artigo
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0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsZaknoune, M ; Cordier, Y ; Bollaert, S ; Ferre, D ; Théron, D ; Crosnier, YSolid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Periódico revisado por pares]Texto completo disponível |