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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
Material Type: Article
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(0 0 1) Textured CoPt/Ag films and nanocomposites: the effect of Ag underlayersManios, E. ; Karanasos, V. ; Niarchos, D. ; Panagiotopoulos, I.Journal of magnetism and magnetic materials, 2004-05, Vol.272, p.2169-2170 [Peer Reviewed Journal]Elsevier B.VFull text available |
| 2 |
Material Type: Article
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(0 0 1) V surface structures analysed by RHEED and STMDulot, F. ; Turban, P. ; Kierren, B. ; Eugène, J. ; Alnot, M. ; Andrieu, S.Surface science, 2001-02, Vol.473 (3), p.172-182 [Peer Reviewed Journal]Lausanne: Elsevier B.VFull text available |
| 3 |
Material Type: Article
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[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvesterKim, Jong-Hyun ; Woo, Jong-Un ; Yee, Yeon-Jeong ; Kim, In-Su ; Shin, Ho-Sung ; Hwang, Hyun-Gyu ; Kweon, Sang Hyo ; Choi, Hyun-Ju ; Nahm, SahnApplied surface science, 2021-01, Vol.537, p.147871, Article 147871 [Peer Reviewed Journal]Elsevier B.VFull text available |
| 4 |
Material Type: Article
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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layersNihei, M. ; Hara, N. ; Suehiro, H. ; Kuroda, S.Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Peer Reviewed Journal]Elsevier LtdFull text available |
| 5 |
Material Type: Article
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0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsZaknoune, M ; Cordier, Y ; Bollaert, S ; Ferre, D ; Théron, D ; Crosnier, YSolid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal]Full text available |
| 6 |
Material Type: Article
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Peer Reviewed Journal]Lausanne: Elsevier ScienceFull text available |
| 7 |
Material Type: Article
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0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess lengthKuliev, A ; Kumar, V ; Schwindt, R ; Selvanathan, D ; Dabiran, A.M ; Chow, P ; Adesida, ISolid-state electronics, 2003, Vol.47 (1), p.117-122 [Peer Reviewed Journal]Elsevier LtdFull text available |
| 8 |
Material Type: Article
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A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile applicationZheng, Hao ; Zhu, Zhangming ; Ma, RuiJournal of semiconductors, 2017-07, Vol.38 (7), p.60-67 [Peer Reviewed Journal]Full text available |
| 9 |
Material Type: Article
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A 0.1-1.5 GHz, low jitter, area efficient PLL in 55-nm CMOS process钟波 朱樟明Journal of semiconductors, 2016-05, Vol.37 (5), p.90-96 [Peer Reviewed Journal]Full text available |
| 10 |
Material Type: Article
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A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifierWei, Shizhe ; Wu, Haifeng ; Lin, Qian ; Zhang, MingzheJournal of semiconductors, 2020-06, Vol.41 (6), p.62401-48 [Peer Reviewed Journal]Chinese Institute of ElectronicsFull text available |
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