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Refinado por: Nome da Publicação: Ieee Transactions On Electron Devices remover
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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio
A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio
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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

Wu, Peng ; Su, Huake ; Zhang, Tao ; Chen, Heyuan ; Xu, Shengrui ; Duan, Xiaoling ; Lv, Yueguang ; Zhang, Jincheng ; Hao, Yue

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4433-4436 [Periódico revisado por pares]

IEEE

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2
Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations
Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations
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Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations

Yoo, Jinil ; Jo, Hyungjun ; Shin, Hyungcheol

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4146-4152 [Periódico revisado por pares]

IEEE

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3
2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization
2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization
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2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization

Pandey, Nilesh ; Chauhan, Yogesh Singh ; Register, Leonard F. ; Banerjee, Sanjay K.

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4347-4354 [Periódico revisado por pares]

New York: IEEE

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4
Research on Luminance Uniformity of Green Micro-LED via Microscopic Hyperspectral System
Research on Luminance Uniformity of Green Micro-LED via Microscopic Hyperspectral System
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Research on Luminance Uniformity of Green Micro-LED via Microscopic Hyperspectral System

Zheng, Lili ; Guo, Ziquan

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4180-4186 [Periódico revisado por pares]

New York: IEEE

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5
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization
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Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization

Liu, Yong ; Wang, Da ; Ren, Pengpeng ; Li, Jie ; Qiao, Zheng ; Wu, Maokun ; Wen, Yichen ; Zhou, Longda ; Sun, Zixuan ; Wang, Zirui ; Han, Qinghua ; Wu, Blacksmith ; Cao, Kanyu ; Wang, Runsheng ; Ji, Zhigang ; Huang, Ru

IEEE transactions on electron devices, 2024-06, p.1-7 [Periódico revisado por pares]

IEEE

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6
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-Nm DRAM Node-Part I: Defect-Based Statistical Compact Model
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-Nm DRAM Node-Part I: Defect-Based Statistical Compact Model
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Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-Nm DRAM Node-Part I: Defect-Based Statistical Compact Model

Liu, Yong ; Wang, Da ; Ren, Pengpeng ; Li, Jie ; Qiao, Zheng ; Wu, Maokun ; Wen, Yichen ; Zhou, Longda ; Sun, Zixuan ; Wang, Zirui ; Han, Qinghua ; Wu, Blacksmith ; Cao, Kanyu ; Wang, Runsheng ; Ji, Zhigang ; Huang, Ru

IEEE transactions on electron devices, 2024-06, p.1-7 [Periódico revisado por pares]

IEEE

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7
Monolithic Investigation of Hydrogen Plasma-Treated and Etched p-GaN Gate HEMTs Under OFF-State Drain Stress
Monolithic Investigation of Hydrogen Plasma-Treated and Etched p-GaN Gate HEMTs Under OFF-State Drain Stress
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Monolithic Investigation of Hydrogen Plasma-Treated and Etched p-GaN Gate HEMTs Under OFF-State Drain Stress

Li, Fan ; Liang, Ye ; Zhang, Yuanlei ; Huang, Yixiao ; Li, Ang ; Zhu, Yuhao ; Yu, Chenruiyuan ; Wang, Yubo ; Wu, Shiqiang ; Yu, Guohao ; Pei, Yi ; Zhang, Baoshun ; Liu, Wen

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3801-3804 [Periódico revisado por pares]

IEEE

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8
Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS
Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS
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Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS

Wang, Yuan ; Liu, Tao ; Dai, Zhijiang ; Tao, Jingyu ; Qian, Lingli ; Wu, Hao ; Hu, Shengdong

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3483-3489 [Periódico revisado por pares]

IEEE

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9
Ternary-State Vertical NAND Flash Memory for the Improvement of the Density and Accuracy of Quantized Neural Networks
Ternary-State Vertical NAND Flash Memory for the Improvement of the Density and Accuracy of Quantized Neural Networks
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Ternary-State Vertical NAND Flash Memory for the Improvement of the Density and Accuracy of Quantized Neural Networks

Chang, Jin Ho ; Woo, Jae Seung ; Sung, Suk-Kang ; Song, Ki-Whan ; Choi, Woo Young

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3985-3988 [Periódico revisado por pares]

IEEE

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10
Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope
Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope
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Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope

Raju, Parameswari ; Xu, Herwen ; Zhu, Hao ; Ioannou, Dimitris E. ; Li, Qiliang

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3135-3141 [Periódico revisado por pares]

New York: IEEE

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