Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologyAmeruddin, Amira S ; Fonseka, H Aruni ; Caroff, Philippe ; Wong-Leung, Jennifer ; Op het Veld, Roy LM ; Boland, Jessica L ; Johnston, Michael B ; Tan, Hark Hoe ; Jagadish, ChennupatiNanotechnology, 2015-05, Vol.26 (20) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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Tuning the crystal structure and optical properties of selective area grown InGaAs nanowiresAzimi, Zahra ; Gopakumar, Aswani ; Ameruddin, Amira S. ; Li, Li ; Truong, Thien ; Nguyen, Hieu T. ; Tan, Hark Hoe ; Jagadish, Chennupati ; Wong-Leung, JenniferNano research, 2022-04, Vol.15 (4), p.3695-3703 [Periódico revisado por pares]Beijing: Tsinghua University PressTexto completo disponível |
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3 |
Material Type: Artigo
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Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength OptoelectronicsAzimi, Zahra ; Gopakumar, Aswani ; Li, Li ; Kremer, Felipe ; Lockrey, Mark ; Wibowo, Ary Anggara ; Nguyen, Hieu T. ; Tan, Hark Hoe ; Jagadish, Chennupati ; Wong‐Leung, JenniferAdvanced optical materials, 2022-09, Vol.10 (18), p.n/aWeinheim: Wiley Subscription Services, IncTexto completo disponível |
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4 |
Material Type: Artigo
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Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical TestingChen, Bin ; Wang, Jun ; Gao, Qiang ; Chen, Yujie ; Liao, Xiaozhou ; Lu, Chunsheng ; Tan, Hark Hoe ; Mai, Yiu-Wing ; Zou, Jin ; Ringer, Simon P ; Gao, Huajian ; Jagadish, ChennupatiNano letters, 2013-09, Vol.13 (9), p.4369-4373 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Effect of a High Density of Stacking Faults on the Young’s Modulus of GaAs NanowiresChen, Yujie ; Burgess, Tim ; An, Xianghai ; Mai, Yiu-Wing ; Tan, H. Hoe ; Zou, Jin ; Ringer, Simon P ; Jagadish, Chennupati ; Liao, XiaozhouNano letters, 2016-03, Vol.16 (3), p.1911-1916 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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6 |
Material Type: Artigo
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Polarized Light Absorption in Wurtzite InP Nanowire EnsemblesDe Luca, Marta ; Zilli, Attilio ; Fonseka, H. Aruni ; Mokkapati, Sudha ; Miriametro, Antonio ; Tan, Hark Hoe ; Smith, Leigh Morris ; Jagadish, Chennupati ; Capizzi, Mario ; Polimeni, AntonioNano letters, 2015-02, Vol.15 (2), p.998-1005 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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7 |
Material Type: Artigo
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n‐SnOx as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting DiodesGagrani, Nikita ; Vora, Kaushal ; Adhikari, Sonachand ; Jiang, Yuxin ; Jagadish, Chennupati ; Tan, Hark HoeAdvanced optical materials, 2022-06, Vol.10 (11), p.n/aWeinheim: Wiley Subscription Services, IncTexto completo disponível |
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8 |
Material Type: Artigo
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature LasingGao, Qian ; Saxena, Dhruv ; Wang, Fan ; Fu, Lan ; Mokkapati, Sudha ; Guo, Yanan ; Li, Li ; Wong-Leung, Jennifer ; Caroff, Philippe ; Tan, Hark Hoe ; Jagadish, ChennupatiNano letters, 2014-09, Vol.14 (9), p.5206-5211 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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9 |
Material Type: Artigo
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Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth ParametersJoyce, Hannah J ; Wong-Leung, Jennifer ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, ChennupatiNano letters, 2010-03, Vol.10 (3), p.908-915 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz SpectroscopyJoyce, Hannah J ; Wong-Leung, Jennifer ; Yong, Chaw-Keong ; Docherty, Callum J ; Paiman, Suriati ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Lloyd-Hughes, James ; Herz, Laura M ; Johnston, Michael BNano letters, 2012-10, Vol.12 (10), p.5325-5330 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |