Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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0. 073% (95% C. L. ) upper limit on 17keV neutrino admixtureOhshima, T.AIP Conference Proceedings (American Institute of Physics); (United States), 1992, Vol.272:1 [Periódico revisado por pares]United StatesSem texto completo |
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2 |
Material Type: Ata de Congresso
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0-1 integer linear programming model for location selection of fire station: A case study in IndonesiaBahri, Susila Apri, Mochamad ; Takeuchi, YasuhiroAIP Conference Proceedings, 2016, Vol.1723 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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3 |
Material Type: Artigo
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0.1-micron-wide sandwich flux guide and free layer for spin dependent tunneling head sensorsPohm, A. V. ; Anderson, J. M.Journal of applied physics, 2002-05, Vol.91 (10), p.8772-8773 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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0.1 ppm four‐terminal resistance bridge for use with a dilution refrigeratorEdmunds, D. L. ; Pratt, W. P. ; Rowlands, J. A.Review of scientific instruments, 1980-11, Vol.51 (11), p.1516-1522 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscopeFujioka, H ; Kunizawa, H ; Ura, KJournal of physics. E, Scientific instruments, 1986-12, Vol.19 (12), p.1025-1026London: IOP PublishingTexto completo disponível |
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6 |
Material Type: Ata de Congresso
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[0,1] truncated inverted Gamma-Inverted gamma distributionAbid, Salah H. ; Kadhim, Fadhl J. Mohammed, Mohammed AhmedAIP Conference Proceedings, 2022, Vol.2394 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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7 |
Material Type: Ata de Congresso
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0.1 μm WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron cyclotron resonance ion stream etching with SF 6 –CF 4 –SiF 4 –O 2Jin, Yoshito ; Takahashi, Chiharu ; Nishimura, Kazumi ; Ono, Toshiro ; Matsuo, SeitaroJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997, Vol.15 (6), p.2639-2642Sem texto completo |
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8 |
Material Type: Artigo
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0.1 μm x‐ray mask replicationGentili, M. ; Kumar, R. ; Luciani, L. ; Grella, L. ; Plumb, D. ; Leonard, Q.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991-11, Vol.9 (6), p.3319-3323 [Periódico revisado por pares]Sem texto completo |
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9 |
Material Type: Ata de Congresso
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0.11 μm x-ray mask replicationGENTILI, M ; KUMAR, R ; LUCIANI, L ; GRELLA, L ; PLUMB, D ; LEONARD, QJournal of vacuum science and technology. B. Microelectronics processing and phenomena, 1991, Vol.9 (6), p.3319-3323New York, NY: American Institute of PhysicsSem texto completo |
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10 |
Material Type: Artigo
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0.15 - 3.72 THz absorption of aqueous salts and saline solutionsXu, Jing ; Plaxco, Kevin W. ; Allen, S. James ; Bjarnason, Jon E. ; Brown, Elliott R.Applied physics letters, 2007-01, Vol.90 (3), p.031908-031908-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |