Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.006wt.%Ag-Doped Sb2O3 Nanofilms with Various Thickness: Morphological and optical propertiesHaneen Abass, Khalid ; Haidar Obaid, NoorJournal of physics. Conference series, 2019-09, Vol.1294 (2), p.22005 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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0.02-wavelengths-thick transmission-type designer wave plate with high efficiencyXu, Peng ; Jiang, Wei Xiang ; Cai, Xiao ; Wang, Zheng Xing ; Cui, Tie JunJournal of physics. D, Applied physics, 2019-09, Vol.52 (37), p.375105 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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0.05 µm (3σ) Overlay Accuracy Through-the-lens Alignment in an Excimer Laser Lithography SystemHigashiki, Tatsuhiko ; Tojo, Toru ; Takahashi, Yoshihiko ; Tabata, Mitsuo ; Nishizaka, Takeshi ; Kuwabara, Osamu ; Uchida, Norio ; Yoshino, Hisakazu ; Saito, SusumuJapanese Journal of Applied Physics, 1992-12, Vol.31 (12S), p.4161 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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0.05 MU-M (3-SIGMA) OVERLAY ACCURACY THROUGH-THE-LENS ALIGNMENT IN AN EXCIMER LASER LITHOGRAPHY SYSTEMHIGASHIKI, T ; TOJO, T ; TAKAHASHI, Y ; TABATA, M ; NISHIZAKA, T ; KUWABARA, O ; UCHIDA, N ; YOSHINO, H ; SAITO, SJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, Vol.31 (12B), p.4161-4166 [Periódico revisado por pares]MINATO-KU TOKYO: JAPAN J APPLIED PHYSICSTexto completo disponível |
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5 |
Material Type: Artigo
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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsENOKI, T ; TOMIZAWA, M ; UMEDA, Y ; ISHII, YJapanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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6 |
Material Type: Artigo
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0.1 µm Fine-Pattern Fabrication Using Variable-Shaped Electron Beam LithographyHashimoto, Kazuhiko ; Yasuda, Masaaki ; Hirai, Yoshihiko ; Kawakita, Kenji ; Nomura, Noboru ; Murata, KenjiJapanese Journal of Applied Physics, 1989-12, Vol.28 (12A), p.L2281 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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0.1-MU M-GATE METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ON GaAs AND ITS APPLICATION TO SOURCE-COUPLED FIELD-EFFECT TRANSISTOR LOGICOhshima, T ; Moriguchi, H ; Hoshi, S ; Itoh, M ; Tsunotani, M ; Ichioka, TJapanese Journal of Applied Physics, Part 1, 2003, Vol.42 (6A), p.3320-3323 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide SemiconductorKamimura, Tatsuya ; Lee, Sang-yeop ; Tanoi, Satoru ; Ito, Hiroyuki ; Ishihara, Noboru ; Masu, KazuyaJapanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DE04-04DE04-6 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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0.13 mu m METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR SINGLE TRANSISTOR MEMORY CELL WITH SEPARATED SOURCE LINEFujiwara, I ; Aozasa, H ; Nakamura, A ; Komatsu, Y ; Hayashi, YJpn.J.Appl.Phys ,Part 1. Vol. 39, no. 2A, pp. 417-423. 2000, 2000, Vol.39 (2A), p.417-423 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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0.13 μm pattern delineation using KrF excimer laser lightIMAI, A ; ASAI, N ; UENO, T ; HASEGAWA, N ; TANAKA, T ; TERASAWA, T ; OKAZAKI, SJapanese journal of applied physics, 1994-12, Vol.33 (12B), p.6816-6822 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |