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1 |
Material Type: Artigo
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{001}/{101} facets co-exposed TiO2 microsheet arrays with Lanthanum doping for enhancing photocatalytic CO2 reductionLiu, Xin ; Yang, Ji ; Hu, Lanqing ; Shen, Qianqian ; Li, Qi ; Liu, Xuguang ; Jia, Husheng ; Xue, JinboJournal of materials science. Materials in electronics, 2020-11, Vol.31 (21), p.19464-19474 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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Material Type: Artigo
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thicknessLaifi, J. ; Bchetnia, A.Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
3 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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Material Type: Artigo
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1-((4-methylpiperazin-1-yl)(phenyl)methyl)naphthalen-2-ol: A novel Mannich base organic NLO crystal for the analysis of electro-optic applicationsDennis Raj, A. ; Jeeva, M. ; Purusothaman, R. ; Venkatesa Prabhu, G. ; Vimalan, M. ; Vetha Potheher, I.Journal of materials science. Materials in electronics, 2017-06, Vol.28 (11), p.7802-7810 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
5 |
Material Type: Artigo
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1.02-μm vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wellsXIANG, N ; LEINONEN, P ; RAJALA, L ; LYYTIKÄINEN, J ; PESSA, MJournal of materials science. Materials in electronics, 2004-02, Vol.15 (2), p.115-117 [Periódico revisado por pares]Norwell, MA: SpringerTexto completo disponível |
6 |
Material Type: Artigo
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1.06 mu m laser absorption properties of Sm sub(2)O sub(2)S prepared by flux methodZhu, Kai ; Ding, Wenhao ; Sun, Wen ; Han, Pengde ; Wang, Lixi ; Zhang, QituJournal of materials science. Materials in electronics, 2016-03, Vol.27 (3), p.2379-2384 [Periódico revisado por pares]Texto completo disponível |
7 |
Material Type: Artigo
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119Sn and 57Fe Mӧssbauer study of highly conductive vanadate glassNishida, Tetsuaki ; Fujita, Yuki ; Shiba, Sachiya ; Masuda, Sayaka ; Yamaguchi, Naomi ; Izumi, Tomoka ; Kubuki, Shiro ; Oka, NobutoJournal of materials science. Materials in electronics, 2019-05, Vol.30 (9), p.8847-8854 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
8 |
Material Type: Artigo
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120 keV Ar ion-induced red and blue shift of SPR Wavelength of Au nanoparticles in fullerene C60Salim, Amena ; Vishnoi, Ritu ; Dixit, Himanshu ; Chaudhary, Vikesh ; Bhardwaj, Jyotsna ; Gupta, Divya ; Aggarwal, Sanjeev ; Dwivedi, Umesh Kumar ; Kumar, Pushpendra ; Bishnoi, Sunita ; Sharma, Ganesh D. ; Singhal, RahulJournal of materials science. Materials in electronics, 2022-07, Vol.33 (19), p.15533-15545 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
9 |
Material Type: Artigo
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1.2 µm and 1.5 µm near-infrared photoluminescence and visible upconversion photoluminescence in GeGaS:Er3+/Ho3+ glasses under 980 nm excitationHimics, Dianna ; Strizik, Lukas ; Oswald, Jiri ; Holubova, Jana ; Benes, Ludvik ; Slang, Stanislav ; Frumarova, Bozena ; Wagner, TomasJournal of materials science. Materials in electronics, 2018-10, Vol.29 (20), p.17314-17322 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
10 |
Material Type: Artigo
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1D-photonic crystals prepared from the amorphous chalcogenide filmsKohoutek, Tomas ; Orava, Jiri ; Wagner, Tomas ; Hrdlicka, Martin ; Vlcek, Milan ; Frumar, MiloslavJournal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.346-350 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |