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Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis
Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis
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Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Poche, Thomas ; Wirth, William ; Jang, Seonhee

Microelectronic engineering, 2024-09, Vol.292, p.112221, Article 112221 [Periódico revisado por pares]

Elsevier B.V

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2
Feasibility study of fabricating 20 nm resolution dielectric Fresnel zone plates with ultrahigh aspect ratio for EUV optics
Feasibility study of fabricating 20 nm resolution dielectric Fresnel zone plates with ultrahigh aspect ratio for EUV optics
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Feasibility study of fabricating 20 nm resolution dielectric Fresnel zone plates with ultrahigh aspect ratio for EUV optics

Wu, Qingxin ; Chen, Qiucheng ; Quan, Hao ; Tong, Xujie ; Zhao, Jun ; Chen, Yifang

Microelectronic engineering, 2024-09, Vol.292, p.112227, Article 112227 [Periódico revisado por pares]

Elsevier B.V

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3
Study on the 12 in. wafer uniformity of high aspect ratio TSV filling by using rotation cathode
Study on the 12 in. wafer uniformity of high aspect ratio TSV filling by using rotation cathode
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Study on the 12 in. wafer uniformity of high aspect ratio TSV filling by using rotation cathode

Zhang, Chi ; Zeng, Guoxian ; Lin, Pengrong ; Guo, Hengtong ; Xu, ShiMeng ; Xie, XiaoChen ; Wang, Fuliang

Microelectronic engineering, 2024-09, Vol.292, p.112181, Article 112181 [Periódico revisado por pares]

Elsevier B.V

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4
Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers
Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers
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Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers

Priya, G. Hari ; Srivastava, S.K. ; Shankar, M.V. ; Srivatsa, K.M.K. ; Joshi, Amish G. ; Peta, Koteswara Rao

Microelectronic engineering, 2024-09, Vol.292, p.112212, Article 112212 [Periódico revisado por pares]

Elsevier B.V

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5
Needle scattered light guided chiplets-interfaced with AI for advanced biomedical application
Needle scattered light guided chiplets-interfaced with AI for advanced biomedical application
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Needle scattered light guided chiplets-interfaced with AI for advanced biomedical application

Taha, Bakr Ahmed ; Abbas, Ehsan M. ; Kadhim, Ahmed C. ; Azzahrani, Ahmad S. ; Haider, Adawiya J. ; Chaudhary, Vishal ; Arsad, Norhana

Microelectronic engineering, 2024-09, Vol.292, p.112228, Article 112228 [Periódico revisado por pares]

Elsevier B.V

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6
Effect of temperature on joint quality in wave soldering of Sn-9Zn-2.5Bi-1.5In lead-free solder alloy
Effect of temperature on joint quality in wave soldering of Sn-9Zn-2.5Bi-1.5In lead-free solder alloy
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Effect of temperature on joint quality in wave soldering of Sn-9Zn-2.5Bi-1.5In lead-free solder alloy

Duk, Vichea ; Ren, Anshi ; Zhang, Gong

Microelectronic engineering, 2024-09, Vol.292, p.112229, Article 112229 [Periódico revisado por pares]

Elsevier B.V

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7
A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection
A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection
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A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection

Zheng, Yiqiang ; Li, Yilin ; Wang, Lili ; Xu, Hao ; Han, Wei

Microelectronic engineering, 2024-08, Vol.291, p.112197, Article 112197 [Periódico revisado por pares]

Elsevier B.V

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8
Critical solder joint in insulated gate bipolar transistors (IGBT) power module for improved mechanical reliability
Critical solder joint in insulated gate bipolar transistors (IGBT) power module for improved mechanical reliability
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Critical solder joint in insulated gate bipolar transistors (IGBT) power module for improved mechanical reliability

Nebo, Sunday E. ; Amalu, Emeka H. ; Hughes, David J.

Microelectronic engineering, 2024-08, Vol.291, p.112200, Article 112200 [Periódico revisado por pares]

Elsevier B.V

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9
Study on plasma-polymerized 1-(trimethylsilyl)pyrrolidine films deposited by plasma-enhanced chemical vapor deposition for use as a Cu diffusion barrier in multilevel metallization process
Study on plasma-polymerized 1-(trimethylsilyl)pyrrolidine films deposited by plasma-enhanced chemical vapor deposition for use as a Cu diffusion barrier in multilevel metallization process
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Study on plasma-polymerized 1-(trimethylsilyl)pyrrolidine films deposited by plasma-enhanced chemical vapor deposition for use as a Cu diffusion barrier in multilevel metallization process

Seo, Chanyong ; Baek, Namwuk ; Kang, Shinwon ; Park, Gihoon ; Cha, Jihwan ; Jang, Taesoon ; Jang, Seonhee ; Jung, Donggeun

Microelectronic engineering, 2024-08, Vol.291, p.112192, Article 112192 [Periódico revisado por pares]

Elsevier B.V

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10
A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films
A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films
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A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films

Guillemin, S. ; Lachal, L. ; Gergaud, P. ; Grenier, A. ; Nemouchi, F. ; Mazen, F. ; Rodriguez, Ph

Microelectronic engineering, 2024-08, Vol.291, p.112210, Article 112210 [Periódico revisado por pares]

Elsevier B.V

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