skip to main content
Idioma:
Mostrar Somente
Refinado por: Nome da Publicação: Semiconductors remover nível superior: Revistas revisadas por pares remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods
Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods
Material Type:
Artigo 		Adicionar ao Meu Espaço

Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

Morozov, S. V. ; Kryzhkov, D. I. ; Gavrilenko, V. I. ; Yablonsky, A. N. ; Kuritsyn, D. I. ; Gaponova, D. M. ; Sadofyev, Yu. G. ; Zvonkov, B. N. ; Vihrova, O. V.

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1376-1380 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

Citações Citado por
2
Diagnostics of quantum cascade structures by optical methods in the near infrared region
Diagnostics of quantum cascade structures by optical methods in the near infrared region
Material Type:
Artigo 		Adicionar ao Meu Espaço

Diagnostics of quantum cascade structures by optical methods in the near infrared region

Kryzhkov, D. I. ; Morozov, S. V. ; Gaponova, D. M. ; Sergeev, S. M. ; Kuritsyn, K. I. ; Maremyanin, K. V. ; Gavrilenko, V. I. ; Sadofyev, Yu. G.

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1411-1414 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

Citações Citado por
3
Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser
Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser

Morozov, M. Yu ; Morozov, Yu. A. ; Popov, V. V.

Semiconductors (Woodbury, N.Y.), 2009-03, Vol.43 (3), p.382-386 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

Citações Citado por
4
Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix
Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix
Material Type:
Artigo 		Adicionar ao Meu Espaço

Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix

Pozina, G. ; Kaliteevski, M. A. ; Nikitina, E. V. ; Gubaidullin, A. R. ; Morozov, K. M. ; Girshova, E. I. ; Ivanov, K. A. ; Egorov, A. Yu

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1822-1826 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
5
GaAs/InGaAsN heterostructures for multi-junction solar cells
GaAs/InGaAsN heterostructures for multi-junction solar cells
Material Type:
Artigo 		Adicionar ao Meu Espaço

GaAs/InGaAsN heterostructures for multi-junction solar cells

Nikitina, E. V. ; Gudovskikh, A. S. ; Lazarenko, A. A. ; Pirogov, E. V. ; Sobolev, M. S. ; Zelentsov, K. S. ; Morozov, I. A. ; Egorov, A. Yu

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.652-655 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
6
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 µm
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 µm
Material Type:
Artigo 		Adicionar ao Meu Espaço

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 µm

Sadofyev, Yu. G ; Samal, N ; Andreev, B.A ; Gavrilenko, V.I ; Morozov, S.V ; Spivakov, A.G ; Yablonsky, A.N

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.405 [Periódico revisado por pares]

Springer

Texto completo disponível

Citações Citado por
7
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 {mu}m
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 {mu}m
Material Type:
Artigo 		Adicionar ao Meu Espaço

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 {mu}m

Sadofyev, Yu. G. ; Samal, N. ; Andreev, B. A. ; Gavrilenko, V. I. ; Morozov, S. V. ; Spivakov, A. G. ; Yablonsky, A. N.

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3) [Periódico revisado por pares]

United States

Texto completo disponível

Citações Citado por
8
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm
Material Type:
Artigo 		Adicionar ao Meu Espaço

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm

Sadofyev, Yu. G. ; Samal, N. ; Andreev, B. A. ; Gavrilenko, V. I. ; Morozov, S. V. ; Spivakov, A. G. ; Yablonsky, A. N.

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.405-412 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

Citações Citado por
9
Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity
Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity
Material Type:
Artigo 		Adicionar ao Meu Espaço

Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity

Rumyantsev, V. V. ; Maremyanin, K. V. ; Fokin, A. P. ; Dubinov, A. A. ; Razova, A. A. ; Mikhailov, N. N. ; Dvoretsky, S. A. ; Glyavin, M. Yu ; Gavrilenko, V. I. ; Morozov, S. V.

Semiconductors (Woodbury, N.Y.), 2021-10, Vol.55 (10), p.785-789 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por
10
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons
Material Type:
Artigo 		Adicionar ao Meu Espaço

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

Maremyanin, K. V. ; Parshin, V. V. ; Serov, E. A. ; Rumyantsev, V. V. ; Kudryavtsev, K. E. ; Dubinov, A. A. ; Fokin, A. P. ; Morosov, S. S. ; Aleshkin, V. Ya ; Glyavin, M. Yu ; Denisov, G. G. ; Morozov, S. V.

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1069-1074 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Recursos Online (23)

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.