Resultados de 1 a 10 de 1.664.079 para Busca Geral
Mostrar Somente
- Revistas revisadas por pares (1.442.342)
Refinado por:
assunto:
Exact Sciences And Technology
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
![(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD](../images/pixel.png){kind=tracking}
Material Type: Artigo
|
|
(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 2 |
Material Type: Artigo
|
|
(0 0 1) V surface structures analysed by RHEED and STMDulot, F. ; Turban, P. ; Kierren, B. ; Eugène, J. ; Alnot, M. ; Andrieu, S.Surface science, 2001-02, Vol.473 (3), p.172-182 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
| 3 |
Material Type: Artigo
|
|
[0 1 0] dislocations in the complex metallic alloy ξ ′-Al–Pd–MnFeuerbacher, M ; Caillard, DActa materialia, 2004-03, Vol.52 (5), p.1297-1304 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
| 4 |
Material Type: Artigo
|
|
0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsENOKI, T ; TOMIZAWA, M ; UMEDA, Y ; ISHII, YJapanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
| 5 |
Material Type: Artigo
|
|
0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMochiji, K ; Ogawa, T ; Oizumil, H ; Soga, TMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Periódico revisado por pares]AMSTERDAM: Elsevier B.VTexto completo disponível |
| 6 |
Material Type: Artigo
|
|
0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layerOmura, Y. ; Nakashima, S. ; Izumi, K. ; Ishii, T.IEEE transactions on electron devices, 1993-05, Vol.40 (5), p.1019-1022 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 7 |
Material Type: Artigo
|
|
0.1 nm information limit with the CM30FEG-special TübingenLichte, Hannes ; Kessler, Peter ; Lenz, Friedrich ; Rau, Wolf-DieterUltramicroscopy, 1993, Vol.52 (3), p.575-580 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 8 |
Material Type: Ata de Congresso
|
|
0.1 μm InGaAs/InAlAs/InP HEMT MMICs: a flight qualified technologyCHOU, Y. C ; LEUNG, D ; LAI, R ; GRUNDBACHER, R ; BARSKY, M ; KAN, Q ; TSAI, RTechnical digest - IEEE Gallium Arsenide Integrated Circuit Symposium, 2002, p.77-80Piscataway NJ: IEEETexto completo disponível |
| 9 |
Material Type: Ata de Congresso
|
|
0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applicationsYANG, J.-Y ; BENAISSA, K ; ASHBURN, S ; MADHANI, P ; BLYTHE, T ; SHICHIJO, H ; CRENSHAW, D ; WILLIAMS, B ; SRIDHAR, S ; AI, J ; BOSELLI, G ; ZHAO, S ; TANG, S.-P ; MAHALINGAM, NPiscataway NJ: IEEE 2002Texto completo disponível |
| 10 |
Material Type: Artigo
|
|
0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
Resultados de 1 a 10 de 1.664.079 para Busca Geral
Personalize Seus Resultados
Refine Search Results
Expandir Meus Resultados
Mostrar Somente
- Revistas revisadas por pares (1.442.342)
Refinar Meus Resultados
Tipo de Recurso
- Artigos (1.534.305)
- Anais de Congresso (126.995)
- magazinearticle (2.006)
- Book Chapters (542)
- Livros (222)
- Resenhas (7)
- Reports (2)
-
Mais opções
Assunto
- Physics (1.495.761)
- Science & Technology (1.328.475)
- Physical Sciences (1.093.745)
- Technology (703.147)
- Materials Science (473.468)
- Physics, Applied (353.367)
- Applied Sciences (340.601)
- Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties (336.261)
- Fundamental Areas Of Phenomenology (316.138)
- Materials Science, Multidisciplinary (314.940)
- Condensed Matter: Structure, Mechanical And Thermal Properties (305.285)
- Physics, Condensed Matter (268.844)
- Chemistry (260.488)
- Cross-Disciplinary Physics: Materials Science; Rheology (247.805)
- Engineering (240.151)
- Chemistry, Physical (170.963)
- Optics (170.723)
- Earth, Ocean, Space (155.691)
- Structure Of Solids And Liquids; Crystallography (138.538)
-
Mais opções
Data de Publicação
- Antes de1982 (65)
- 1982Até1990 (338.752)
- 1991Até1999 (445.902)
- 2000Até2009 (609.994)
- Após 2009 (272.531)
-
Mais opções
Base de Dados/Biblioteca
- Science Citation Index Expanded (Web of Science) (1.267.109)
- Elsevier ScienceDirect Journals (652.189)
- Materials Research Database (245.084)
- NUS Single-Journal Subscriptions (225.980)
- Free E-Journal (出版社公開部分のみ） (224.815)
- IOPscience extra (191.826)
- METADEX (187.651)
- HEAL-Link subscriptions: Institute of Physics (IOP) Journals (183.610)
- Aerospace Database (174.940)
- IngentaConnect Journals (173.169)
- IOP Publishing Journals (173.050)
- SpringerNature Journals (154.619)
- Springer Nature - Springer Journals All 2022 (125.822)
- Engineered Materials Abstracts (125.684)
- EBSCOhost Academic Search Premier (115.181)
- Wiley Online Library (106.644)
- American Institute of Physics (100.171)
- DOAJ Directory of Open Access Journals (82.265)
- BACON - Mir@bel - GLOBAL_LIBRESACCES (81.411)
- SPIE Digital Library Journals (76.248)
-
Mais opções
Idioma
Nome da Publicação
- Physical Review. B, Condensed Matter (33.373)
- The Astrophysical Journal (30.340)
- Journal Of Physics. Condensed Matter (26.647)
- Thin Solid Films (24.974)
- Journal Of Crystal Growth (22.532)
- Applied Surface Science (22.421)
- Journal Of Alloys And Compounds (21.261)
- Ieee Transactions On Magnetics (20.192)
- Solid State Communications (20.144)
- Journal Of Applied Physics (19.626)
-
Mais opções
Página Inicial
RSS
Feed
Políticas
Fale Conosco-
Realização:
Logos de Redes Sociais: 