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Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
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Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

CHICHIBU, Shigefusa F ; OHMORI, Takuya ; SHIBATA, Naoyuki ; KOYAMA, Takahiro ; ONUMA, Takeyoshi

The Journal of physics and chemistry of solids, 2005-11, Vol.66 (11), p.1868-1871 [Periódico revisado por pares]

Oxford: Elsevier

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2
UX6-100 nm generation CMOS integration technology with Cu/low-k interconnect
UX6-100 nm generation CMOS integration technology with Cu/low-k interconnect
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UX6-100 nm generation CMOS integration technology with Cu/low-k interconnect

Fukasaku, K. ; Ono, A. ; Hirai, T. ; Yasuda, Y. ; Okada, N. ; Koyama, S. ; Tamura, T. ; Yamada, Y. ; Nakata, T. ; Yamana, M. ; Ikezawa, N. ; Matsuda, T. ; Arita, K. ; Nambu, H. ; Nishizawa, A. ; Nakabeppu, K. ; Nakamura, N.

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.64-65

Piscataway NJ: IEEE

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3
Patterning characteristics under small variations of the mask and wafer in SR lithography
Patterning characteristics under small variations of the mask and wafer in SR lithography
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Patterning characteristics under small variations of the mask and wafer in SR lithography

FUKUDA, M ; KOYAMA, N ; TSUYUZAKI, H ; SUZUKI, M ; ISHIHARA, S

Microelectronic engineering, 1996, Vol.30 (1-4), p.203-206 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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4
Advanced FIB mask repair technology for Arf lithography (3)
Advanced FIB mask repair technology for Arf lithography (3)
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Advanced FIB mask repair technology for Arf lithography (3)

HAGIWARA, Ryoji ; YASAKA, Anto ; AITA, Kazuo ; ADACHI, Tatsuya ; KUBO, Shinji ; YOSHIOKA, Nobuyuki ; MORIMOTO, Hiroaki ; MORIKAWA, Yasutaka ; IWASE, Kazuya ; HAYASHI, Naoya ; TAKAOKA, Osamu ; KOZAKAI, Tomokazu ; YABE, Satoru ; KOYAMA, Yoshihiro ; MURAMATSU, Masashi ; DOI, Toshio ; SUZUKI, Katsumi ; OKABE, Mamoru

SPIE proceedings series, 2001, p.555-562

Bellingham WA: SPIE

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5
Advanced FIB mask repair technology for 100nm/ArF lithography (2)
Advanced FIB mask repair technology for 100nm/ArF lithography (2)
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Advanced FIB mask repair technology for 100nm/ArF lithography (2)

HAGIWARA, Ryoji ; YASAKA, Anto ; MATSUDA, Osamu ; OKABE, Mamoru ; SHINOHARA, Shoji ; HASUDA, Masakatsu ; ADACHI, Tatsuya ; MORIKAWA, Yasutaka ; NISHIGUCHI, Masaharu ; SATO, Yasushi ; HAYASHI, Naoya ; OZAWA, Toshiya ; AITA, Kazuo ; TANAKA, Yoshihiro ; YOSHIOKA, Nobuyuki ; TAKAOKA, Osamu ; KOYAMA, Yoshihiro ; KOZAKAI, Tomokazu ; DOI, Toshio ; MURAMATSU, Masashi ; SUZUKI, Katsumi ; SUGIYAMA, Yasuhiko

SPIE proceedings series, 2003, p.510-519

Bellingham WA: SPIE

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6
Bipyridyl substituted triazoles as hole-blocking and electron-transporting materials for organic light-emitting devices
Bipyridyl substituted triazoles as hole-blocking and electron-transporting materials for organic light-emitting devices
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Bipyridyl substituted triazoles as hole-blocking and electron-transporting materials for organic light-emitting devices

Ichikawa, Musubu ; Fujimoto, Soichi ; Miyazawa, Yuta ; Koyama, Toshiki ; Yokoyama, Norimasa ; Miki, Tetsuzo ; Taniguchi, Yoshio

Organic electronics, 2008-02, Vol.9 (1), p.77-84 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Solution-processable dendric triphenylamine nonamers as hole-transporting and hole-injection materials for organic light-emitting devices
Solution-processable dendric triphenylamine nonamers as hole-transporting and hole-injection materials for organic light-emitting devices
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Solution-processable dendric triphenylamine nonamers as hole-transporting and hole-injection materials for organic light-emitting devices

Ichikawa, Musubu ; Hibino, Kumiko ; Yokoyama, Norimasa ; Miki, Tetsuzo ; Koyama, Toshiki ; Taniguchi, Yoshio

Synthetic metals, 2006-12, Vol.156 (21), p.1383-1389 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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8
Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy
Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy
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Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy

Inaba, Y. ; Uchida, T. ; Yokouchi, N. ; Miyamoto, T. ; Mori, K. ; Koyama, F. ; Iga, K.

Journal of crystal growth, 1994-03, Vol.136 (1), p.297-301 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures
Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures
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Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

ISHIDORA, Yohei ; KOYAMA, Koji ; MORIOKA, Jun ; INADA, Taroh ; SUGII, Nobuyuki

Thin solid films, 2006-06, Vol.508 (1-2), p.284-287 [Periódico revisado por pares]

Lausanne: Elsevier Science

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10
Simulation of magnetization distribution in magnetoresistive film under a longitudinal bias field
Simulation of magnetization distribution in magnetoresistive film under a longitudinal bias field
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Simulation of magnetization distribution in magnetoresistive film under a longitudinal bias field

ISHIKAWA, C ; SUZUKI, K ; KOYAMA, N ; YOSHIDA, K ; SUGITA, Y ; SHINAGAWA, K ; NAKATANI, Y ; HAYASHI, N

Journal of applied physics, 1993-11, Vol.74 (9), p.5666-5671 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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