Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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(0 0 1) V surface structures analysed by RHEED and STMDulot, F. ; Turban, P. ; Kierren, B. ; Eugène, J. ; Alnot, M. ; Andrieu, S.Surface science, 2001-02, Vol.473 (3), p.172-182 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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[0 1 0] dislocations in the complex metallic alloy ξ ′-Al–Pd–MnFeuerbacher, M ; Caillard, DActa materialia, 2004-03, Vol.52 (5), p.1297-1304 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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4 |
Material Type: Artigo
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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiencyChen, Yong ; Mak, Pui-In ; Zhang, Li ; Qian, He ; Wang, YanElectronics letters, 2013-10, Vol.49 (21), p.1340-1342 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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6 |
Material Type: Artigo
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0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcessHIGASHIKI, T ; TOJO, T ; TAKAHASHI, Y ; TABATA, M ; NISHIZAKA, T ; KUWABARA, O ; UCHIDA, N ; YOSHINO, H ; SAITO, SJapanese journal of applied physics, 1992, Vol.31 (12B), p.4161-4166 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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7 |
Material Type: Artigo
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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsENOKI, T ; TOMIZAWA, M ; UMEDA, Y ; ISHII, YJapanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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8 |
Material Type: Ata de Congresso
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A 0.013 mm2, 5 μW, DC-Coupled Neural Signal Acquisition IC With 0.5 V SupplyMULLER, Rikky ; GAMBINI, Simone ; RABAEY, Jan MIEEE journal of solid-state circuits, 2012, Vol.47 (1), p.232-243 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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9 |
Material Type: Artigo
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A 0.016-mm2 144-μW Three-Stage Amplifier Capable of Driving 1-to-15 nF Capacitive Load With >0.95-MHz GBWZUSHU YAN ; MAK, Pui-In ; LAW, Man-Kay ; MARTINS, Rui PIEEE journal of solid-state circuits, 2013, Vol.48 (2), p.527-540 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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10 |
Material Type: Ata de Congresso
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A 0.016 mm2, 2.4 GHz RF Signal Quality Measurement Macro for RF Test and DiagnosisNOSE, Koichi ; MIZUNO, MasayukiIEEE journal of solid-state circuits, 2008, Vol.43 (4), p.1038-1046 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |